First demonstration of MSM photodetectors in bulk GaInNAs layers

S. H. Hsu; Y. K. Su; S. J. Chang; R. W. Chuang; W. C. Chen

doi:10.1109/CLEOPR.2005.1569576

First demonstration of MSM photodetectors in bulk GaInNAs layers

S. H. Hsu
, Y. K. Su
, S. J. Chang
, R. W. Chuang
, W. C. Chen

研究成果: Conference contribution

摘要

Metal-Semiconductor-Metal (MSM) photodetectors with thick Ga _0.85In_0.15N_0.011As_0.989 epilayers were fabricated. With small amount of incorporating nitrogen, thick and dislocation-free GaInNAs/GaAs material for absorption layers can be achieved. Photocurrent spectra show that a responsivity higher than 0.06 A/W at 4V is obtained with a cutoff wavelength of 1.27mu;m.

原文	English
主出版物標題	Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005
頁面	861-862
頁數	2
DOIs	https://doi.org/10.1109/CLEOPR.2005.1569576
出版狀態	Published - 2005
事件	Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005 - Tokyo, Japan 持續時間: 2005 7月 11 → 2005 7月 15

出版系列

名字	Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
卷	2005

Other

Other	Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005
國家/地區	Japan
城市	Tokyo
期間	05-07-11 → 05-07-15

All Science Journal Classification (ASJC) codes

電子、光磁材料
原子與分子物理與光學
凝聚態物理學
電氣與電子工程

存取文件

10.1109/CLEOPR.2005.1569576

其它文件與鏈接

引用此

Hsu, S. H., Su, Y. K., Chang, S. J., Chuang, R. W., & Chen, W. C. (2005). First demonstration of MSM photodetectors in bulk GaInNAs layers. 於 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005 (頁 861-862). 文章 1569576 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest; 卷 2005). https://doi.org/10.1109/CLEOPR.2005.1569576

@inproceedings{3ab9bf02241a471c895baeef2737bd20,

title = "First demonstration of MSM photodetectors in bulk GaInNAs layers",

abstract = "Metal-Semiconductor-Metal (MSM) photodetectors with thick Ga 0.85In0.15N0.011As0.989 epilayers were fabricated. With small amount of incorporating nitrogen, thick and dislocation-free GaInNAs/GaAs material for absorption layers can be achieved. Photocurrent spectra show that a responsivity higher than 0.06 A/W at 4V is obtained with a cutoff wavelength of 1.27mu;m.",

author = "Hsu, \{S. H.\} and Su, \{Y. K.\} and Chang, \{S. J.\} and Chuang, \{R. W.\} and Chen, \{W. C.\}",

year = "2005",

doi = "10.1109/CLEOPR.2005.1569576",

language = "English",

isbn = "0780392426",

series = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest",

pages = "861--862",

booktitle = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005",

note = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005 ; Conference date: 11-07-2005 Through 15-07-2005",

}

Hsu, SH, Su, YK , Chang, SJ , Chuang, RW & Chen, WC 2005, First demonstration of MSM photodetectors in bulk GaInNAs layers. 於 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005., 1569576, Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 卷 2005, 頁 861-862, Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005, Tokyo, Japan, 05-07-11. https://doi.org/10.1109/CLEOPR.2005.1569576

TY - GEN

T1 - First demonstration of MSM photodetectors in bulk GaInNAs layers

AU - Hsu, S. H.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Chuang, R. W.

AU - Chen, W. C.

PY - 2005

Y1 - 2005

N2 - Metal-Semiconductor-Metal (MSM) photodetectors with thick Ga 0.85In0.15N0.011As0.989 epilayers were fabricated. With small amount of incorporating nitrogen, thick and dislocation-free GaInNAs/GaAs material for absorption layers can be achieved. Photocurrent spectra show that a responsivity higher than 0.06 A/W at 4V is obtained with a cutoff wavelength of 1.27mu;m.

AB - Metal-Semiconductor-Metal (MSM) photodetectors with thick Ga 0.85In0.15N0.011As0.989 epilayers were fabricated. With small amount of incorporating nitrogen, thick and dislocation-free GaInNAs/GaAs material for absorption layers can be achieved. Photocurrent spectra show that a responsivity higher than 0.06 A/W at 4V is obtained with a cutoff wavelength of 1.27mu;m.

UR - https://www.scopus.com/pages/publications/33847105485

UR - https://www.scopus.com/pages/publications/33847105485#tab=citedBy

U2 - 10.1109/CLEOPR.2005.1569576

DO - 10.1109/CLEOPR.2005.1569576

M3 - Conference contribution

AN - SCOPUS:33847105485

SN - 0780392426

SN - 9780780392427

T3 - Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

SP - 861

EP - 862

BT - Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005

T2 - Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005

Y2 - 11 July 2005 through 15 July 2005

ER -

First demonstration of MSM photodetectors in bulk GaInNAs layers

摘要

出版系列

Other

All Science Journal Classification (ASJC) codes

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