First-principles simulation of neutral and charged oxygen vacancies in m-ZrO₂: an origin of filamentary type resistive switching

Engineering & Materials Science

• Oxygen vacancies 100%
• Density functional theory 27%
• Fermi level 16%
• Oxides 15%
• Electronic properties 14%
• Band structure 12%
• Memristors 11%
• Electron energy levels 10%
• Electric Conductivity 10%
• Electrons 9%
• Defects 6%
• Metals 5%
• Electric potential 4%

Chemical Compounds

• Simulation 41%
• Dioxygen 31%
• Cohesive Energy 24%
• Energy 13%
• Electron Localization 12%
• Atomistic Simulation 11%
• Energy State 11%
• Electronic Band Structure 9%
• Diffusion Coefficient 8%
• Velocity 7%
• Metal Oxide 7%
• Electrical Conductivity 7%
• Voltage 6%
• Diffusion 5%
• Oxide 5%