Flexible atomic buckling and homogeneous edge states in few-layer Bi(110) films

Yanfeng Lyu, Samira Daneshmandi, Shuyuan Huyan, Chingwu Chu

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

The structure and edge states of two-dimensional few-layer Bi(110) films grown on a graphene/SiC substrate were studied by low-temperature scanning tunneling microscopy and spectroscopy. We found that the local density of states of few-layer Bi(110) films are layer-dependent and that the films transition from exhibiting semiconducting characteristics to metallic ones as the number of layers increases. The in-plane lattice structure has numerous displacements and inversions, which implies that the atomic arrangement and atomic buckling in ultrathin Bi(110) films are flexible. The edges formed between 4-monolayer Bi(110) and graphene are reconstructed and distorted, and the corresponding edge states are topographically dependent. Steps from the substrate and domain boundaries also modify the electronic structures and induce additional defect-dependent states, We also found that the zigzag-shaped step edges in few-layer Bi(110) films are nonreconstructed and possess layer-dependent homogeneous edge states, providing a very likely platform for further research on quantum interference of the edge mode in order to confirm the topology in Bi(110).[Figure not available: see fulltext.]

原文English
頁(從 - 到)2374-2381
頁數8
期刊Nano Research
15
發行號3
DOIs
出版狀態Published - 2022 3月

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學
  • 材料科學(全部)
  • 凝聚態物理學
  • 電氣與電子工程

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