Flicker Noise of GaN-Based Heterostructure Field-Effect Transistors With Si-Doped AlGaN Carrier Injection Layer

Yan Kuin Su, Sun Chin Wei, Ruey Lue Wang, Shoou Jinn Chang, Chih Hsin Ko, Ta Ming Kuan

研究成果: Article

18 引文 斯高帕斯(Scopus)

摘要

Aluminum gallium nitride/gallium nitride (AlGaN/GaN) heterostructure field effect transistors (HFETs) with and without Si-doped AlGaN layer were fabricated and investigated. HFETs with the Si-doped AlGaN carrier-injection layer show better dc performance, and the transconductance is 150 mS/mm. However, the HFETs with Si-doped AlGaN layer present the deviation from the 1/f noise at low frequency. The Lorentz shape was observed in the noise spectrum. It suggests that traps might be more pronounced in this kind of structure. Therefore, the dc characteristics of HFETs can be improved by the insertion of Si-doped AlGaN layer, but it can result in more low-frequency noise with the carrier-injection layer.

原文English
頁(從 - 到)622-624
頁數3
期刊IEEE Electron Device Letters
24
發行號10
DOIs
出版狀態Published - 2003 十月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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