Flip-chip p(GaN)-i(GaN)-n(AlGaN) narrowband UV-A photosensors

T. K. Ko, S. C. Shei, Shoou-Jinn Chang, Y. K. Su, Y. Z. Chiou, Yu-Cheng Lin, C. S. Chang, W. S. Chen, C. K. Wang, Jinn-Kong Sheu, Wei-Chi Lai

研究成果: Article

7 引文 斯高帕斯(Scopus)


Flip-chip p(GaN)-i(GaN)-n(AlGaN) photosensors with extremely low dark currents were fabricated and characterized. It was found that the sensor with a 0.5-μm-thick Si-doped n +-Al 0.15Ga 0.85N layer could only detect optical signals with wavelength in between 325 and 360 nm. With an incident wavelength of 355 nm, the authors achieved a peak responsivity of 0.16 A/W at zero bias, which corresponds to an external quantum efficiency of 56%.

頁(從 - 到)964-968
期刊IEEE Sensors Journal
出版狀態Published - 2006 八月 1

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

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    Ko, T. K., Shei, S. C., Chang, S-J., Su, Y. K., Chiou, Y. Z., Lin, Y-C., Chang, C. S., Chen, W. S., Wang, C. K., Sheu, J-K., & Lai, W-C. (2006). Flip-chip p(GaN)-i(GaN)-n(AlGaN) narrowband UV-A photosensors. IEEE Sensors Journal, 6(4), 964-968. [1661579]. https://doi.org/10.1109/JSEN.2006.878000