TY - JOUR
T1 - Flower-like ZnO nanorod arrays grown on HF-etched Si (111)
T2 - Constraining relation between ZnO seed layer and Si (111)
AU - Brahma, Sanjaya
AU - Liu, C. W.
AU - Huang, R. J.
AU - Chang, S. J.
AU - Lo, K. Y.
N1 - Publisher Copyright:
© 2015 IOP Publishing Ltd.
PY - 2015/11
Y1 - 2015/11
N2 - Wedemonstrate the formation of self-assembled homogenous flower-like ZnO nanorods over a ZnO seed layer deposited on a HF-etched Si (111) substrate. The typical flower-like morphology of ZnO nanorod arrays is ascribed to the formation of the island-like seed layer which is deposited by the drop method followed by annealing at 300 °C. The island-like ZnO seed layer consists of larger ZnO grains, and is built by constraining of the Si (111) surface due to pattern matching. Pattern matching of Si with ZnO determines the shape and size of the seed layer and this controls the final morphology of ZnO nanorods to be either flower like or vertically aligned. The high quality of the island-like ZnO seed layer enhances the diameter and length of ZnO nanorods. Besides, while the amorphous layer formed during the annealing process would influence the strained ZnO grain, that subsequent amorphous layer will not block the constraining between the ZnO grain and the substrate.
AB - Wedemonstrate the formation of self-assembled homogenous flower-like ZnO nanorods over a ZnO seed layer deposited on a HF-etched Si (111) substrate. The typical flower-like morphology of ZnO nanorod arrays is ascribed to the formation of the island-like seed layer which is deposited by the drop method followed by annealing at 300 °C. The island-like ZnO seed layer consists of larger ZnO grains, and is built by constraining of the Si (111) surface due to pattern matching. Pattern matching of Si with ZnO determines the shape and size of the seed layer and this controls the final morphology of ZnO nanorods to be either flower like or vertically aligned. The high quality of the island-like ZnO seed layer enhances the diameter and length of ZnO nanorods. Besides, while the amorphous layer formed during the annealing process would influence the strained ZnO grain, that subsequent amorphous layer will not block the constraining between the ZnO grain and the substrate.
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U2 - 10.1088/2053-1591/2/11/115003
DO - 10.1088/2053-1591/2/11/115003
M3 - Article
AN - SCOPUS:84953410717
SN - 2053-1591
VL - 2
JO - Materials Research Express
JF - Materials Research Express
IS - 11
M1 - 115003
ER -