TY - JOUR
T1 - Fluorinated h-BN As a magnetic semiconductor
AU - Radhakrishnan, Sruthi
AU - Das, Deya
AU - Samanta, Atanu
AU - De Los Reyes, Carlos A.
AU - Deng, Liangzi
AU - Alemany, Lawrence B.
AU - Weldeghiorghis, Thomas K.
AU - Khabashesku, Valery N.
AU - Kochat, Vidya
AU - Jin, Zehua
AU - Sudeep, Parambath M.
AU - Martí, Angel A.
AU - Chu, Ching Wu
AU - Roy, Ajit
AU - Tiwary, Chandra Sekhar
AU - Singh, Abhishek K.
AU - Ajayan, Pulickel M.
N1 - Publisher Copyright:
© Copyright 2017 The Authors, some rights reserved.
PY - 2017/7/5
Y1 - 2017/7/5
N2 - We report the fluorination of electrically insulating hexagonal boron nitride (h-BN) and the subsequent modification of its electronic band structure to a wide bandgap semiconductor via introduction of defect levels. The electrophilic nature of fluorine causes changes in the charge distribution around neighboring nitrogen atoms in h-BN, leading to room temperature weak ferromagnetism. The observations are further supported by theoretical calculations considering various possible configurations of fluorinated h-BN structure and their energy states. This unconventional magnetic semiconductor material could spur studies of stable two-dimensional magnetic semiconductors. Although the high thermal and chemical stability of h-BN have found a variety of uses, this chemical functionalization approach expands its functionality to electronic and magnetic devices.
AB - We report the fluorination of electrically insulating hexagonal boron nitride (h-BN) and the subsequent modification of its electronic band structure to a wide bandgap semiconductor via introduction of defect levels. The electrophilic nature of fluorine causes changes in the charge distribution around neighboring nitrogen atoms in h-BN, leading to room temperature weak ferromagnetism. The observations are further supported by theoretical calculations considering various possible configurations of fluorinated h-BN structure and their energy states. This unconventional magnetic semiconductor material could spur studies of stable two-dimensional magnetic semiconductors. Although the high thermal and chemical stability of h-BN have found a variety of uses, this chemical functionalization approach expands its functionality to electronic and magnetic devices.
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U2 - 10.1126/sciadv.1700842
DO - 10.1126/sciadv.1700842
M3 - Article
C2 - 28740867
AN - SCOPUS:85043494300
SN - 2375-2548
VL - 3
JO - Science Advances
JF - Science Advances
IS - 7
M1 - e1700842
ER -