Formation of CuInAlSe2 film with double graded bandgap using Mo(Al) back contact

Dung Ching Perng, Jhin Wei Chen, Chyi Jeng Wu

研究成果: Article

27 引文 斯高帕斯(Scopus)

摘要

Using Al added Mo back electrode to provide Al source to form CuInAlSe 2 (CIAS) absorber with self-formed double graded bandgap (or Al concentration) is reported. The double Al grading is self-forming and requires no process tweaking or modification. A 15 at % Al in Mo(Al) film yielded 0.39 Al/(InAl) ratio in the CIAS film with a bandgap of 1.54 eV at the surface. The benefits of doping Al into Mo film are: lower resistance of the Mo layer, improved Mo to glass adhesion, increased surface electric field or improved minority carrier collection from the graded Al content (graded bandgap), and supply Al to form a CIAS absorber layer.

原文English
頁(從 - 到)257-260
頁數4
期刊Solar Energy Materials and Solar Cells
95
發行號1
DOIs
出版狀態Published - 2011 一月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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