Formation of CuInAlSe2 film with double graded bandgap using Mo(Al) back contact

Dung Ching Perng; Jhin Wei Chen; Chyi Jeng Wu

doi:10.1016/j.solmat.2010.04.046

Formation of CuInAlSe₂ film with double graded bandgap using Mo(Al) back contact

Dung Ching Perng
, Jhin Wei Chen
, Chyi Jeng Wu

研究成果: Article › 同行評審

27 引文斯高帕斯（Scopus）

摘要

Using Al added Mo back electrode to provide Al source to form CuInAlSe ₂ (CIAS) absorber with self-formed double graded bandgap (or Al concentration) is reported. The double Al grading is self-forming and requires no process tweaking or modification. A 15 at % Al in Mo(Al) film yielded 0.39 Al/(InAl) ratio in the CIAS film with a bandgap of 1.54 eV at the surface. The benefits of doping Al into Mo film are: lower resistance of the Mo layer, improved Mo to glass adhesion, increased surface electric field or improved minority carrier collection from the graded Al content (graded bandgap), and supply Al to form a CIAS absorber layer.

原文	English
頁（從 - 到）	257-260
頁數	4
期刊	Solar Energy Materials and Solar Cells
卷	95
發行號	1
DOIs	https://doi.org/10.1016/j.solmat.2010.04.046
出版狀態	Published - 2011 1月 1

UN SDG

此研究成果有助於以下永續發展目標

SDG 7 經濟實惠的清潔能源

All Science Journal Classification (ASJC) codes

電子、光磁材料
可再生能源、永續發展與環境
表面、塗料和薄膜

存取文件

10.1016/j.solmat.2010.04.046

其它文件與鏈接

引用此

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abstract = "Using Al added Mo back electrode to provide Al source to form CuInAlSe 2 (CIAS) absorber with self-formed double graded bandgap (or Al concentration) is reported. The double Al grading is self-forming and requires no process tweaking or modification. A 15 at \% Al in Mo(Al) film yielded 0.39 Al/(InAl) ratio in the CIAS film with a bandgap of 1.54 eV at the surface. The benefits of doping Al into Mo film are: lower resistance of the Mo layer, improved Mo to glass adhesion, increased surface electric field or improved minority carrier collection from the graded Al content (graded bandgap), and supply Al to form a CIAS absorber layer.",

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