Forming local semi-insulating regions on silicon wafers by proton bombardment

Chungpin Liao, Tzuen Hsi Huang, Chwan Ying Lee, Duan lee Tang

研究成果: Paper

4 引文 (Scopus)

摘要

A low-cost method that creates local semi-insulating regions in a typically silicon wafers having substrate resistivity of around 10 Ohm-cm is presented. It is demonstrated that the local semi-insulating substrate can be formed by Mev protons bombardment of silicon wafers. The Mega-ohm-cm resistivity substrate is ideal for FG applications and mixed mode IC applications.

原文English
頁面80-81
頁數2
出版狀態Published - 1998 十二月 1
事件Proceedings of the 1998 56th Annual Device Research Conference - Charlottesville, VA, USA
持續時間: 1998 六月 221998 六月 24

Other

OtherProceedings of the 1998 56th Annual Device Research Conference
城市Charlottesville, VA, USA
期間98-06-2298-06-24

指紋

Silicon wafers
Protons
Substrates
Costs

All Science Journal Classification (ASJC) codes

  • Engineering(all)

引用此文

Liao, C., Huang, T. H., Lee, C. Y., & Tang, D. L. (1998). Forming local semi-insulating regions on silicon wafers by proton bombardment. 80-81. 論文發表於 Proceedings of the 1998 56th Annual Device Research Conference, Charlottesville, VA, USA, .
Liao, Chungpin ; Huang, Tzuen Hsi ; Lee, Chwan Ying ; Tang, Duan lee. / Forming local semi-insulating regions on silicon wafers by proton bombardment. 論文發表於 Proceedings of the 1998 56th Annual Device Research Conference, Charlottesville, VA, USA, .2 p.
@conference{1db3b7aa59fc49bebf1b31d993948d59,
title = "Forming local semi-insulating regions on silicon wafers by proton bombardment",
abstract = "A low-cost method that creates local semi-insulating regions in a typically silicon wafers having substrate resistivity of around 10 Ohm-cm is presented. It is demonstrated that the local semi-insulating substrate can be formed by Mev protons bombardment of silicon wafers. The Mega-ohm-cm resistivity substrate is ideal for FG applications and mixed mode IC applications.",
author = "Chungpin Liao and Huang, {Tzuen Hsi} and Lee, {Chwan Ying} and Tang, {Duan lee}",
year = "1998",
month = "12",
day = "1",
language = "English",
pages = "80--81",
note = "Proceedings of the 1998 56th Annual Device Research Conference ; Conference date: 22-06-1998 Through 24-06-1998",

}

Liao, C, Huang, TH, Lee, CY & Tang, DL 1998, 'Forming local semi-insulating regions on silicon wafers by proton bombardment', 論文發表於 Proceedings of the 1998 56th Annual Device Research Conference, Charlottesville, VA, USA, 98-06-22 - 98-06-24 頁 80-81.

Forming local semi-insulating regions on silicon wafers by proton bombardment. / Liao, Chungpin; Huang, Tzuen Hsi; Lee, Chwan Ying; Tang, Duan lee.

1998. 80-81 論文發表於 Proceedings of the 1998 56th Annual Device Research Conference, Charlottesville, VA, USA, .

研究成果: Paper

TY - CONF

T1 - Forming local semi-insulating regions on silicon wafers by proton bombardment

AU - Liao, Chungpin

AU - Huang, Tzuen Hsi

AU - Lee, Chwan Ying

AU - Tang, Duan lee

PY - 1998/12/1

Y1 - 1998/12/1

N2 - A low-cost method that creates local semi-insulating regions in a typically silicon wafers having substrate resistivity of around 10 Ohm-cm is presented. It is demonstrated that the local semi-insulating substrate can be formed by Mev protons bombardment of silicon wafers. The Mega-ohm-cm resistivity substrate is ideal for FG applications and mixed mode IC applications.

AB - A low-cost method that creates local semi-insulating regions in a typically silicon wafers having substrate resistivity of around 10 Ohm-cm is presented. It is demonstrated that the local semi-insulating substrate can be formed by Mev protons bombardment of silicon wafers. The Mega-ohm-cm resistivity substrate is ideal for FG applications and mixed mode IC applications.

UR - http://www.scopus.com/inward/record.url?scp=0032314102&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032314102&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0032314102

SP - 80

EP - 81

ER -

Liao C, Huang TH, Lee CY, Tang DL. Forming local semi-insulating regions on silicon wafers by proton bombardment. 1998. 論文發表於 Proceedings of the 1998 56th Annual Device Research Conference, Charlottesville, VA, USA, .