An new photo-spacer and bump formation in one-shot process has been developed by using a gray-tone mask. In this design, two to three kind of photo-resist height can be formed in one photolithography step. Bump with sapcer, concave shaped bump, or anti-bump can then be formed with different mask pattern design. Moreover, this new process can be readily applied to top ITO type LCD, such as LTPs TFT-LCD. The effect of the mask pattern can be simulated first to check the exposure result. The optimized results are also reported.
|頁（從 - 到）||569-572|
|期刊||SID Conference Record of the International Display Research Conference|
|出版狀態||Published - 2001|
|事件||Asia Display/IDW 2001 - Nagoya, Japan|
持續時間: 2002 十月 16 → 2002 十月 19
All Science Journal Classification (ASJC) codes