Four-level two-electron FDTD model of lasing action in a semiconductor

Shih Hui Chang, Hui Cao, Allen Taflove

研究成果: Conference article

1 引文 斯高帕斯(Scopus)

摘要

A new multiphysics finite-difference time-domain (FDTD) model of the lasing dynamics of a semiconductor was reported. The model incorporates a semiconductor band structure which allows four energy levels for each of the two interacting electrons. This approach presents an advance relative to the method described which did not include the pumping dynamics, the semiconductor band structure, or the exclusion principle. The technique allows to solve for the full dynamics of lasing action in semiconductor media.

原文English
頁(從 - 到)382-385
頁數4
期刊IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)
4
出版狀態Published - 2003 九月 1
事件2003 IEEE International Antennas and Propagation Symposium and USNC/CNC/URSI North American Radio Science Meeting - Columbus, OH, United States
持續時間: 2003 六月 222003 六月 27

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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