TY - JOUR
T1 - Free carrier absorption in P-type epitaxial Si and GaAs films for far-infrared detection
AU - Perera, A. G.U.
AU - Shen, W. Z.
AU - Tanner, M. O.
AU - Wang, K. L.
AU - Schaff, W.
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 1997
Y1 - 1997
N2 - We report the investigation of free-carrier absorption characteristics for epitaxially grown p-type thin films in the far-infrared region (50 approx. 200 μm), where homojunction interfacial workfunction internal photoemission (HIWIP) detectors are employed. Five Si and three GaAs thin films were grown by MBE over a range of carrier concentrations, and the experimental absorption data were compared with calculated results. The free-hole absorption is found to be almost independent of the wavelength. A linear regression relationship between the absorption coefficient and the carrier concentration, in agreement with theory, has been obtained and employed to calculate the photon absorption probability in HIWIP detectors. The detector responsivity follows the quantum efficiency predicted by concentration dependence of the free carrier absorption coefficient.
AB - We report the investigation of free-carrier absorption characteristics for epitaxially grown p-type thin films in the far-infrared region (50 approx. 200 μm), where homojunction interfacial workfunction internal photoemission (HIWIP) detectors are employed. Five Si and three GaAs thin films were grown by MBE over a range of carrier concentrations, and the experimental absorption data were compared with calculated results. The free-hole absorption is found to be almost independent of the wavelength. A linear regression relationship between the absorption coefficient and the carrier concentration, in agreement with theory, has been obtained and employed to calculate the photon absorption probability in HIWIP detectors. The detector responsivity follows the quantum efficiency predicted by concentration dependence of the free carrier absorption coefficient.
UR - https://www.scopus.com/pages/publications/0031389343
UR - https://www.scopus.com/pages/publications/0031389343#tab=citedBy
U2 - 10.1557/proc-484-199
DO - 10.1557/proc-484-199
M3 - Conference article
AN - SCOPUS:0031389343
SN - 0272-9172
VL - 484
SP - 199
EP - 204
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1997 MRS Fall Symposium
Y2 - 30 November 1997 through 4 December 1997
ER -