跳至主導覽
跳至搜尋
跳過主要內容
國立成功大學 首頁
English
中文
在 國立成功大學 搜尋內容
首頁
概要
研究單位
研究成果
專案
學生論文
設備
獎項
活動
Free carrier absorption in P-type epitaxial Si and GaAs films for far-infrared detection
A. G.U. Perera
, W. Z. Shen
, M. O. Tanner
, K. L. Wang
, W. Schaff
電機資訊學院
研究成果
:
Conference article
›
同行評審
總覽
指紋
指紋
深入研究「Free carrier absorption in P-type epitaxial Si and GaAs films for far-infrared detection」主題。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Keyphrases
Epitaxial Si
100%
P-type
100%
Si Film
100%
Far-infrared
100%
GaAs Film
100%
Free Carrier Absorption
100%
Infrared Detection
100%
Carrier Concentration
66%
Homojunction
66%
Absorption Coefficient
66%
Work Function
66%
Internal Photoemission
66%
Quantum Efficiency
33%
Linear Regression
33%
Free Hole
33%
Epitaxially Grown
33%
Infrared Region
33%
Concentration Dependence
33%
Detector Responsivity
33%
Photon Absorption
33%
Absorption Characteristics
33%
Regression Relationship
33%
GaAs Thin Film
33%
Absorption Probability
33%
Engineering
Gallium Arsenide
100%
Carrier Absorption
100%
Carrier Concentration
66%
Thin Films
66%
Absorptivity
66%
Photoemission
66%
Absorption Coefficient
66%
Homojunction
66%
Quantum Efficiency
33%
Responsivity
33%
Infrared Region
33%
Free Hole
33%
Material Science
Film
100%
Carrier Concentration
100%
Gallium Arsenide
100%
Molecular Beam Epitaxy
50%
Thin Films
50%
Thin Film Types
50%