Frequency response of microwave dielectric Bi2(Zn1/3Nb2/3)2O7 thin films laser deposited on indium-tin oxide coated glass

Hsiu Fung Cheng, Yi Chun Chen, I. Nan Lin

研究成果: Article同行評審

34 引文 斯高帕斯(Scopus)

摘要

Bi2(Zn1/3Nb2/3)2O7 (BZN) thin films were prepared by using a pulsed laser deposition technique. For films in situ deposited on indium-tin oxide (ITO) coated glass substrates, the crystalline phase can be obtained by growing at a substrate temperature (7s) higher than 475 °C. Too low a substrate temperature (rs<400 °C) results in the amorphous phase, whereas too high a temperature (Ts >600 °C) leads to substantial interaction between the BZN film and the ITO layer. For the films deposited at a 500 °C substrate temperature, the texture characteristics change with their thickness. The films are (222) preferentially oriented when they are thin, and (400) preferentially oriented when they are thick. The optical properties, measured using optical spectroscopy, reveal that the index of refraction (n) and absorption coefficient (κ) vary between n = 2.08-2.51 and κ = 1.22 × 10-5-1.88×10-4nm-1, respectively. These optical parameters do not change significantly with the preferred orientation and thickness of the films. However, the low frequency dielectric properties are closely correlated with the material's characteristics. The crystalline BZN films have a markedly larger dielectric constant than the amorphous films.

原文English
頁(從 - 到)479-483
頁數5
期刊Journal of Applied Physics
87
發行號1
DOIs
出版狀態Published - 2000 一月 1

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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深入研究「Frequency response of microwave dielectric Bi<sub>2</sub>(Zn<sub>1/3</sub>Nb<sub>2/3</sub>)<sub>2</sub>O<sub>7</sub> thin films laser deposited on indium-tin oxide coated glass」主題。共同形成了獨特的指紋。

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