Fully Photoswitchable Phototransistor Memory Comprising Perovskite Quantum Dot-Based Hybrid Nanocomposites as a Photoresponsive Floating Gate

Yun Chi Chiang, Wei Chen Yang, Chih Chien Hung, Ender Ercan, Yu Cheng Chiu, Yan Cheng Lin, Wen Chang Chen

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

Tremendous research efforts have been dedicated into the field of photoresponsive nonvolatile memory devices owing to their advantages of fast transmitting speed, low latency, and power-saving property that are suitable for replacing current electrical-driven electronics. However, the reported memory devices still rely on the assistance of gate bias to program them, and a real fully photoswitchable transistor memory is still rare. Herein, we report a phototransistor memory device comprising polymer/perovskite quantum dot (QD) hybrid nanocomposites as a photoresponsive floating gate. The perovskite QDs offer an effective discreteness with an excellent photoresponse that are suitable for photogate application. In addition, a series of ultraviolet (UV)-sensitive insulating polymer hosts were designed to investigate the effect of UV light on the memory behavior. We found that a fully photoswitchable memory device was fulfilled by using the independent and sequential photoexcitation between a UV-sensitive polymer host and a visible light-sensitive QD photogates, which produced decent photoresponse, memory switchability, and highly stable memory retention with a memory ratio of 104 over 104 s. This study not only unraveled the mystery in the fully photoswitchable functionality of nonvolatile memory but also enlightened their potential in the next-generation electronics for light-fidelity application.

原文English
頁(從 - 到)1675-1684
頁數10
期刊ACS Applied Materials and Interfaces
15
發行號1
DOIs
出版狀態Published - 2023

All Science Journal Classification (ASJC) codes

  • 一般材料科學

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