Fundamental 1/f noise and the Hooge parameter in semiconductor quantum wires

A. Balandin, K. L. Wang, Alexei Svizhenko, S. Bandyopadhyay

研究成果: Article同行評審

23 引文 斯高帕斯(Scopus)

摘要

We have calculated the Hooge parameter αH characterizing fundamental 1/f noise in a free-standing intrinsic silicon quantum wire using microscopic noise theory. Our model takes into account quasi-one-dimensional confinement of both phonons and electrons. We find that at low temperatures, αH can be reduced significantly by an external magnetic field which suppresses large-angle electron scattering. This allows one to quench 1/f noise. Furthermore, a magnetic field provides a convenient tool to probe the source of noise in quantum wires, and, to a certain degree, test the validity of the microscopic mobility-fluctuation quantum noise model itself.

原文English
頁(從 - 到)1240-1244
頁數5
期刊IEEE Transactions on Electron Devices
46
發行號6
DOIs
出版狀態Published - 1999

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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