Ga2 O3/GaN-based metal-semiconductor-metal photodetectors covered with au nanoparticles

Zheng Da Huang, Wen Yin Weng, Shoou Jinn Chang, Yuan Fu Hua, Chiu Jung Chiu, Tsung Ying Tsai

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

GaN-based metal-semiconductor-metal photodetectors (PDs) with a β- Ga2 O3 layer were fabricated. To increase performance, the Ga2 O 3/GaN-based PDs were covered with Au nanoparticles. The reverse leakage current decreased by more than two orders of magnitude with a 10-V applied bias and a 95-fold increase of the rejection ratio (250/360 nm) was achieved with a 1-V applied bias after the PDs were covered with Au nanoparticles. There was an obvious response at 490 nm because of the surface plasmon resonance in Au nanoparticles. The results indicate that Au nanoparticles can be used to improve the performance of optoelectronic devices.

原文English
文章編號6576164
頁(從 - 到)1809-1811
頁數3
期刊IEEE Photonics Technology Letters
25
發行號18
DOIs
出版狀態Published - 2013

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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