Speed and power performances of Si-based stacked-nanowire gate-all-around (GAA) FETs and pragmatic ultra-thin-fin FETs at the 5nm CMOS technology node are projected, compared, and physically explained based on 3-D numerical simulations. The respective device domains are also used to compare integration densities based on 6T-SRAM layouts. Predicted comparable performances and densities, with considerations of the complexity/cost of GAAFET processing versus that of the FinFET with pragmatic simplifications, suggest that the FinFET is the better choice for the future.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering