GaAs-InGaAs doped-channel negative-differential-resistance field-effect transistor (NDRFET)

Wen-Chau Liu, Lih Wen Laih, Jung Hui Tsai, Kong Beng Thei, Cheng Zu Wu, Wen Shiung Lour, Yuan Tzu Ting, Rong Chau Liu

研究成果: Paper同行評審

1 引文 斯高帕斯(Scopus)

摘要

A GaAs/n+-InGaAs/GaAs doped-channel field effect transistor device with the significant transistor performances is studied. The use of GaAs/n+-InGaAs/GaAs doped-channel structure takes the benefits of 1) enhanced electron mobility and velocity in the InGaAs channel and 2) elimination of the undesired DX centers or persistent photoconductivity effect. The studied GaAs/n+-InGaAs/GaAs doped channel structures exhibit the anomalous negative-differential-resistance (NDR) phenomenon. The interesting three-terminal-controlled NDR, especially at high voltage regime, is similar to the current-voltage performance of heterostructure insulated gate transistor.

原文English
頁面103-106
頁數4
出版狀態Published - 1995 十二月 1
事件Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 - Hong Kong, Hong Kong
持續時間: 1995 十一月 61995 十一月 10

Other

OtherProceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95
城市Hong Kong, Hong Kong
期間95-11-0695-11-10

All Science Journal Classification (ASJC) codes

  • 電腦科學應用
  • 電氣與電子工程

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