GaAs-InGaAs doped-channel negative-differential-resistance field-effect transistor (NDRFET)

Wen-Chau Liu, Lih Wen Laih, Jung Hui Tsai, Kong Beng Thei, Cheng Zu Wu, Wen Shiung Lour, Yuan Tzu Ting, Rong Chau Liu

研究成果: Paper

1 引文 (Scopus)

摘要

A GaAs/n+-InGaAs/GaAs doped-channel field effect transistor device with the significant transistor performances is studied. The use of GaAs/n+-InGaAs/GaAs doped-channel structure takes the benefits of 1) enhanced electron mobility and velocity in the InGaAs channel and 2) elimination of the undesired DX centers or persistent photoconductivity effect. The studied GaAs/n+-InGaAs/GaAs doped channel structures exhibit the anomalous negative-differential-resistance (NDR) phenomenon. The interesting three-terminal-controlled NDR, especially at high voltage regime, is similar to the current-voltage performance of heterostructure insulated gate transistor.

原文English
頁面103-106
頁數4
出版狀態Published - 1995 十二月 1
事件Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 - Hong Kong, Hong Kong
持續時間: 1995 十一月 61995 十一月 10

Other

OtherProceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95
城市Hong Kong, Hong Kong
期間95-11-0695-11-10

指紋

Field effect transistors
Transistors
Electron mobility
Photoconductivity
Electric potential
Heterojunctions

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

引用此文

Liu, W-C., Laih, L. W., Tsai, J. H., Thei, K. B., Wu, C. Z., Lour, W. S., ... Liu, R. C. (1995). GaAs-InGaAs doped-channel negative-differential-resistance field-effect transistor (NDRFET). 103-106. 論文發表於 Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95, Hong Kong, Hong Kong, .
Liu, Wen-Chau ; Laih, Lih Wen ; Tsai, Jung Hui ; Thei, Kong Beng ; Wu, Cheng Zu ; Lour, Wen Shiung ; Ting, Yuan Tzu ; Liu, Rong Chau. / GaAs-InGaAs doped-channel negative-differential-resistance field-effect transistor (NDRFET). 論文發表於 Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95, Hong Kong, Hong Kong, .4 p.
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title = "GaAs-InGaAs doped-channel negative-differential-resistance field-effect transistor (NDRFET)",
abstract = "A GaAs/n+-InGaAs/GaAs doped-channel field effect transistor device with the significant transistor performances is studied. The use of GaAs/n+-InGaAs/GaAs doped-channel structure takes the benefits of 1) enhanced electron mobility and velocity in the InGaAs channel and 2) elimination of the undesired DX centers or persistent photoconductivity effect. The studied GaAs/n+-InGaAs/GaAs doped channel structures exhibit the anomalous negative-differential-resistance (NDR) phenomenon. The interesting three-terminal-controlled NDR, especially at high voltage regime, is similar to the current-voltage performance of heterostructure insulated gate transistor.",
author = "Wen-Chau Liu and Laih, {Lih Wen} and Tsai, {Jung Hui} and Thei, {Kong Beng} and Wu, {Cheng Zu} and Lour, {Wen Shiung} and Ting, {Yuan Tzu} and Liu, {Rong Chau}",
year = "1995",
month = "12",
day = "1",
language = "English",
pages = "103--106",
note = "Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 ; Conference date: 06-11-1995 Through 10-11-1995",

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Liu, W-C, Laih, LW, Tsai, JH, Thei, KB, Wu, CZ, Lour, WS, Ting, YT & Liu, RC 1995, 'GaAs-InGaAs doped-channel negative-differential-resistance field-effect transistor (NDRFET)', 論文發表於 Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95, Hong Kong, Hong Kong, 95-11-06 - 95-11-10 頁 103-106.

GaAs-InGaAs doped-channel negative-differential-resistance field-effect transistor (NDRFET). / Liu, Wen-Chau; Laih, Lih Wen; Tsai, Jung Hui; Thei, Kong Beng; Wu, Cheng Zu; Lour, Wen Shiung; Ting, Yuan Tzu; Liu, Rong Chau.

1995. 103-106 論文發表於 Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95, Hong Kong, Hong Kong, .

研究成果: Paper

TY - CONF

T1 - GaAs-InGaAs doped-channel negative-differential-resistance field-effect transistor (NDRFET)

AU - Liu, Wen-Chau

AU - Laih, Lih Wen

AU - Tsai, Jung Hui

AU - Thei, Kong Beng

AU - Wu, Cheng Zu

AU - Lour, Wen Shiung

AU - Ting, Yuan Tzu

AU - Liu, Rong Chau

PY - 1995/12/1

Y1 - 1995/12/1

N2 - A GaAs/n+-InGaAs/GaAs doped-channel field effect transistor device with the significant transistor performances is studied. The use of GaAs/n+-InGaAs/GaAs doped-channel structure takes the benefits of 1) enhanced electron mobility and velocity in the InGaAs channel and 2) elimination of the undesired DX centers or persistent photoconductivity effect. The studied GaAs/n+-InGaAs/GaAs doped channel structures exhibit the anomalous negative-differential-resistance (NDR) phenomenon. The interesting three-terminal-controlled NDR, especially at high voltage regime, is similar to the current-voltage performance of heterostructure insulated gate transistor.

AB - A GaAs/n+-InGaAs/GaAs doped-channel field effect transistor device with the significant transistor performances is studied. The use of GaAs/n+-InGaAs/GaAs doped-channel structure takes the benefits of 1) enhanced electron mobility and velocity in the InGaAs channel and 2) elimination of the undesired DX centers or persistent photoconductivity effect. The studied GaAs/n+-InGaAs/GaAs doped channel structures exhibit the anomalous negative-differential-resistance (NDR) phenomenon. The interesting three-terminal-controlled NDR, especially at high voltage regime, is similar to the current-voltage performance of heterostructure insulated gate transistor.

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Liu W-C, Laih LW, Tsai JH, Thei KB, Wu CZ, Lour WS 等. GaAs-InGaAs doped-channel negative-differential-resistance field-effect transistor (NDRFET). 1995. 論文發表於 Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95, Hong Kong, Hong Kong, .