GaAs-InGaAs double delta-doped quantum-well switching device prepared by molecular beam epitaxy

Wei Chou Hsu, Wen Chau Liu, Der Feng Guo, Wen Shiung Lour

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

A new GaAs negative-differential-resistance (NDR) switching device with a double delta-doped quantum-well structure, prepared by molecular beam epitaxy (MBE), has been fabricated and demonstrated. The double delta-doped sheets δ(p+) located in InGaAs quantum wells produce potential barriers for electron injection. Owing to the avalanche multiplication process and potential redistribution effect, the significant S-shaped NDR phenomenon is obtained. From experimental results, it is known that the temperature variation introduces an effective influence on the device properties. Consequently, the studied structure may produce a good potential for switching device applications.

原文English
頁(從 - 到)1504-1506
頁數3
期刊Applied Physics Letters
62
發行號13
DOIs
出版狀態Published - 1993

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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