GaAs-InGaAs quantum-well resonant-tunneling switching device grown by molecular beam epitaxy

Wen Chau Liu, Der Feng Guo, Shiuh Ren Yih, Jing Tong Liang, Lih Wen Liah, Gau Ming Lyuu

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this letter, a new switching device having a p-type delta-doped sheet in the center of an InGaAs-GaAs quantum well is presented. An N-shaped negative-differential-resistance (NDR) phenomenon resulting from the resonant tunneling effect through the miniband under a proper anode-to-cathode voltage is observed. From the experimental results, it is seen that the temperature plays an important role in the device operation.

原文English
頁(從 - 到)2685-2687
頁數3
期刊Applied Physics Letters
64
發行號20
DOIs
出版狀態Published - 1994

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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