Liquid-phase deposition of SiO2 (LPD-SiO2) is used for the deposition of silicon dioxide (∼40 Å) on GaAs substrate during GaAs metal-oxide-semiconductor field effect transistors (MOSFET) fabrication with an 8 μm gate length and 40 μm channel width, thereby providing the advantage of a process temperature lower than 60°C. LPD-SiO2 quality can be improved significantly by annealing at 400°C in N2 for 33 min. This occurs automatically, however, during source (drain) ohmic contact deposition/alloying, which also requires annealing at 400°C in N2 for 33 min. A normalized transconductance was obtained in the vicinity of 280 mS/mm. High-quality MOSFET fabrication using LPD-SiO2 is proven feasible, and involves fewer fabrication steps than other MOSFET fabrication technologies.
|頁（從 - 到）||5561-5562|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 2002 九月|
All Science Journal Classification (ASJC) codes
- 工程 (全部)
- 物理與天文學 (全部)