GaAs metal-oxide-semiconductor field effect transistors fabricated with low-temperature liquid-phase-deposited SiO2

Chien Jung Huang, Zhen Song Ya, Jui Hong Horng, Mau Phon Houng, Yeong Her Wang

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

Liquid-phase deposition of SiO2 (LPD-SiO2) is used for the deposition of silicon dioxide (∼40 Å) on GaAs substrate during GaAs metal-oxide-semiconductor field effect transistors (MOSFET) fabrication with an 8 μm gate length and 40 μm channel width, thereby providing the advantage of a process temperature lower than 60°C. LPD-SiO2 quality can be improved significantly by annealing at 400°C in N2 for 33 min. This occurs automatically, however, during source (drain) ohmic contact deposition/alloying, which also requires annealing at 400°C in N2 for 33 min. A normalized transconductance was obtained in the vicinity of 280 mS/mm. High-quality MOSFET fabrication using LPD-SiO2 is proven feasible, and involves fewer fabrication steps than other MOSFET fabrication technologies.

原文English
頁(從 - 到)5561-5562
頁數2
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
41
發行號9
DOIs
出版狀態Published - 2002 九月

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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