GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer

Ching Ting Lee, Kuo Chuan Shyu, Iang Jeng Lin, Hao Hsiung Lin

研究成果: Conference article

1 引文 斯高帕斯(Scopus)

摘要

A novel metal-semiconductor field effect transistor (MESFET) with InGaP/GaAs multiple quantum barrier (MQB) buffer layer was studied. Since the effective potential barrier height is enhanced using the InGaP/GaAs MQB structure, good performances of electronic and optical isolations are achieved. A configuration with the MESFET and sidegate electrode was fabricated to demonstrate the function of the InGaP/GaAs MQB structure.

原文English
頁(從 - 到)147-150
頁數4
期刊Materials Science and Engineering B: Solid-State Materials for Advanced Technology
74
發行號1
DOIs
出版狀態Published - 2000 五月 1
事件3rd International Conference on Low Dimensional Structures and Devices (LDSD'99) - Antalya, Turkey
持續時間: 1999 九月 151999 九月 17

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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