TY - JOUR
T1 - GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer
AU - Lee, Ching Ting
AU - Shyu, Kuo Chuan
AU - Lin, Iang Jeng
AU - Lin, Hao Hsiung
N1 - Funding Information:
The authors wish to acknowledge the National Science Council of the Republic of China for financial support under grant NSC 89-2215-E008-030.
PY - 2000/5/1
Y1 - 2000/5/1
N2 - A novel metal-semiconductor field effect transistor (MESFET) with InGaP/GaAs multiple quantum barrier (MQB) buffer layer was studied. Since the effective potential barrier height is enhanced using the InGaP/GaAs MQB structure, good performances of electronic and optical isolations are achieved. A configuration with the MESFET and sidegate electrode was fabricated to demonstrate the function of the InGaP/GaAs MQB structure.
AB - A novel metal-semiconductor field effect transistor (MESFET) with InGaP/GaAs multiple quantum barrier (MQB) buffer layer was studied. Since the effective potential barrier height is enhanced using the InGaP/GaAs MQB structure, good performances of electronic and optical isolations are achieved. A configuration with the MESFET and sidegate electrode was fabricated to demonstrate the function of the InGaP/GaAs MQB structure.
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U2 - 10.1016/S0921-5107(99)00551-6
DO - 10.1016/S0921-5107(99)00551-6
M3 - Conference article
AN - SCOPUS:0033730097
SN - 0921-5107
VL - 74
SP - 147
EP - 150
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
IS - 1
T2 - 3rd International Conference on Low Dimensional Structures and Devices (LDSD'99)
Y2 - 15 September 1999 through 17 September 1999
ER -