A novel metal-semiconductor field effect transistor (MESFET) with InGaP/GaAs multiple quantum barrier (MQB) buffer layer was studied. Since the effective potential barrier height is enhanced using the InGaP/GaAs MQB structure, good performances of electronic and optical isolations are achieved. A configuration with the MESFET and sidegate electrode was fabricated to demonstrate the function of the InGaP/GaAs MQB structure.
|頁（從 - 到）||147-150|
|期刊||Materials Science and Engineering B: Solid-State Materials for Advanced Technology|
|出版狀態||Published - 2000 五月 1|
|事件||3rd International Conference on Low Dimensional Structures and Devices (LDSD'99) - Antalya, Turkey|
持續時間: 1999 九月 15 → 1999 九月 17
All Science Journal Classification (ASJC) codes