GaAs n + i delta p + in + BARRIER TRANSISTOR WITH ULTRA-THIN p + AlGaAs BASE PREPARED BY MOLECULAR BEAM EPITAXY.

W. C. Liu; Y. H. Wang; C. Y. Chang; S. A. Liao

doi:10.1049/ip-i-1.1986.0010

GaAs n⁺ i delta p⁺ in⁺ BARRIER TRANSISTOR WITH ULTRA-THIN p⁺ AlGaAs BASE PREPARED BY MOLECULAR BEAM EPITAXY.

W. C. Liu, Y. H. Wang, C. Y. Chang, S. A. Liao

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

A GaAs n** plus i delta p** plus in** plus bulk barrier transistor with an ultra-thin p** plus Al//0//. //2Ga//0//. //8As base was fabricated by molecular beam epitaxy. It is found that the barrier height can be modified by the DELTA E//c for the conduction band barrier and by the DELTA E//v for the valence band barrier, in addition to the planar doped bulk barrier. Both the base-emitter bias voltage and the incident light intensity can modulate the collector current.

原文	English
頁（從 - 到）	47-48
頁數	2
期刊	IEE Proceedings I: Solid State and Electron Devices
卷	133
發行號	2
DOIs	https://doi.org/10.1049/ip-i-1.1986.0010
出版狀態	Published - 1986 1月 1

All Science Journal Classification (ASJC) codes

工程 (全部)

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10.1049/ip-i-1.1986.0010

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引用此

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title = "GaAs n + i delta p + in + BARRIER TRANSISTOR WITH ULTRA-THIN p + AlGaAs BASE PREPARED BY MOLECULAR BEAM EPITAXY.",

abstract = "A GaAs n** plus i delta p** plus in** plus bulk barrier transistor with an ultra-thin p** plus Al//0//. //2Ga//0//. //8As base was fabricated by molecular beam epitaxy. It is found that the barrier height can be modified by the DELTA E//c for the conduction band barrier and by the DELTA E//v for the valence band barrier, in addition to the planar doped bulk barrier. Both the base-emitter bias voltage and the incident light intensity can modulate the collector current.",

author = "Liu, {W. C.} and Wang, {Y. H.} and Chang, {C. Y.} and Liao, {S. A.}",

year = "1986",

month = jan,

day = "1",

doi = "10.1049/ip-i-1.1986.0010",

language = "English",

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AU - Liu, W. C.

AU - Wang, Y. H.

AU - Chang, C. Y.

AU - Liao, S. A.

PY - 1986/1/1

Y1 - 1986/1/1

N2 - A GaAs n** plus i delta p** plus in** plus bulk barrier transistor with an ultra-thin p** plus Al//0//. //2Ga//0//. //8As base was fabricated by molecular beam epitaxy. It is found that the barrier height can be modified by the DELTA E//c for the conduction band barrier and by the DELTA E//v for the valence band barrier, in addition to the planar doped bulk barrier. Both the base-emitter bias voltage and the incident light intensity can modulate the collector current.

AB - A GaAs n** plus i delta p** plus in** plus bulk barrier transistor with an ultra-thin p** plus Al//0//. //2Ga//0//. //8As base was fabricated by molecular beam epitaxy. It is found that the barrier height can be modified by the DELTA E//c for the conduction band barrier and by the DELTA E//v for the valence band barrier, in addition to the planar doped bulk barrier. Both the base-emitter bias voltage and the incident light intensity can modulate the collector current.

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UR - http://www.scopus.com/inward/citedby.url?scp=0022696881&partnerID=8YFLogxK

U2 - 10.1049/ip-i-1.1986.0010

DO - 10.1049/ip-i-1.1986.0010

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VL - 133

SP - 47

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JO - IET Circuits, Devices and Systems

JF - IET Circuits, Devices and Systems

SN - 1751-858X

IS - 2

ER -

GaAs n + i delta p + in + BARRIER TRANSISTOR WITH ULTRA-THIN p + AlGaAs BASE PREPARED BY MOLECULAR BEAM EPITAXY.

摘要

All Science Journal Classification (ASJC) codes

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引用此

GaAs n⁺ i delta p⁺ in⁺ BARRIER TRANSISTOR WITH ULTRA-THIN p⁺ AlGaAs BASE PREPARED BY MOLECULAR BEAM EPITAXY.