GaAs n + i delta p + in + BARRIER TRANSISTOR WITH ULTRA-THIN p + AlGaAs BASE PREPARED BY MOLECULAR BEAM EPITAXY.

W. C. Liu, Y. H. Wang, C. Y. Chang, S. A. Liao

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

A GaAs n** plus i delta p** plus in** plus bulk barrier transistor with an ultra-thin p** plus Al//0//. //2Ga//0//. //8As base was fabricated by molecular beam epitaxy. It is found that the barrier height can be modified by the DELTA E//c for the conduction band barrier and by the DELTA E//v for the valence band barrier, in addition to the planar doped bulk barrier. Both the base-emitter bias voltage and the incident light intensity can modulate the collector current.

原文English
頁(從 - 到)47-48
頁數2
期刊IEE Proceedings I: Solid State and Electron Devices
133
發行號2
DOIs
出版狀態Published - 1986 1月 1

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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