GaAs tri-step high-low doping channel field effect transistor

Wen-Chau Liu, Jung Hui Tsai, Li-Wen, Kong Beng Thei, Chang Zn Wu, Wen Shung Lour, Yuan-Tzu, Rong Chau Liu

研究成果: Paper

摘要

A fabricated camel-gate FET with a tri-step doping channel exhibits a larger drain current density of >750 mA/mm. Furthermore, the relatively voltage-independent transconductance is as high as 220 mS/mm and the applied gate voltage is of up to +1.5V. A 1.5×100 μm2 gate dimension device was found to have a fT of about 30 GHz with very low input capacitance.

原文English
頁面107-110
頁數4
出版狀態Published - 1995 十二月 1
事件Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 - Hong Kong, Hong Kong
持續時間: 1995 十一月 61995 十一月 10

Other

OtherProceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95
城市Hong Kong, Hong Kong
期間95-11-0695-11-10

指紋

Field effect transistors
Doping (additives)
Gates (transistor)
Drain current
Transconductance
Electric potential
Capacitance
Current density

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

引用此文

Liu, W-C., Tsai, J. H., Li-Wen, Thei, K. B., Wu, C. Z., Lour, W. S., ... Liu, R. C. (1995). GaAs tri-step high-low doping channel field effect transistor. 107-110. 論文發表於 Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95, Hong Kong, Hong Kong, .
Liu, Wen-Chau ; Tsai, Jung Hui ; Li-Wen ; Thei, Kong Beng ; Wu, Chang Zn ; Lour, Wen Shung ; Yuan-Tzu ; Liu, Rong Chau. / GaAs tri-step high-low doping channel field effect transistor. 論文發表於 Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95, Hong Kong, Hong Kong, .4 p.
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abstract = "A fabricated camel-gate FET with a tri-step doping channel exhibits a larger drain current density of >750 mA/mm. Furthermore, the relatively voltage-independent transconductance is as high as 220 mS/mm and the applied gate voltage is of up to +1.5V. A 1.5×100 μm2 gate dimension device was found to have a fT of about 30 GHz with very low input capacitance.",
author = "Wen-Chau Liu and Tsai, {Jung Hui} and Li-Wen and Thei, {Kong Beng} and Wu, {Chang Zn} and Lour, {Wen Shung} and Yuan-Tzu and Liu, {Rong Chau}",
year = "1995",
month = "12",
day = "1",
language = "English",
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Liu, W-C, Tsai, JH, Li-Wen, Thei, KB, Wu, CZ, Lour, WS, Yuan-Tzu & Liu, RC 1995, 'GaAs tri-step high-low doping channel field effect transistor', 論文發表於 Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95, Hong Kong, Hong Kong, 95-11-06 - 95-11-10 頁 107-110.

GaAs tri-step high-low doping channel field effect transistor. / Liu, Wen-Chau; Tsai, Jung Hui; Li-Wen; Thei, Kong Beng; Wu, Chang Zn; Lour, Wen Shung; Yuan-Tzu; Liu, Rong Chau.

1995. 107-110 論文發表於 Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95, Hong Kong, Hong Kong, .

研究成果: Paper

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T1 - GaAs tri-step high-low doping channel field effect transistor

AU - Liu, Wen-Chau

AU - Tsai, Jung Hui

AU - Li-Wen,

AU - Thei, Kong Beng

AU - Wu, Chang Zn

AU - Lour, Wen Shung

AU - Yuan-Tzu,

AU - Liu, Rong Chau

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N2 - A fabricated camel-gate FET with a tri-step doping channel exhibits a larger drain current density of >750 mA/mm. Furthermore, the relatively voltage-independent transconductance is as high as 220 mS/mm and the applied gate voltage is of up to +1.5V. A 1.5×100 μm2 gate dimension device was found to have a fT of about 30 GHz with very low input capacitance.

AB - A fabricated camel-gate FET with a tri-step doping channel exhibits a larger drain current density of >750 mA/mm. Furthermore, the relatively voltage-independent transconductance is as high as 220 mS/mm and the applied gate voltage is of up to +1.5V. A 1.5×100 μm2 gate dimension device was found to have a fT of about 30 GHz with very low input capacitance.

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Liu W-C, Tsai JH, Li-Wen, Thei KB, Wu CZ, Lour WS 等. GaAs tri-step high-low doping channel field effect transistor. 1995. 論文發表於 Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95, Hong Kong, Hong Kong, .