GaAs/AlGaAs Multiple Quantum Well GRIN-SCH Vertical Cavity Surface Emitting Laser Diodes

Y. H. Wang; K. Tai; J. D. Wynn; M. Hong; R. J. Fischer; J. P. Mannaerts; A. Y. Cho

doi:10.1109/68.56622

GaAs/AlGaAs Multiple Quantum Well GRIN-SCH Vertical Cavity Surface Emitting Laser Diodes

Y. H. Wang, K. Tai, J. D. Wynn, M. Hong, R. J. Fischer, J. P. Mannaerts, A. Y. Cho

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

摘要

Vertical cavity surface emitting lasers (VCSEL) with GaAs/ AIGaAs multiple quantum well (20 wells) graded index separate confinement heterostructure (GRIN-SCH) active regions were fabricated. The VCSEL structures containing also two AlxGa1-xAs/AIyGa1-y As distributed Bragg reflectors were grown by molecular beam epitaxy and had a threshold current and current density at room temperature pulsed excitation of 16 m A and 14 kA/cm2, respectively, near 0.85 μm wavelength. Both single longitudinal and fundamental transverse mode emission characteristics were observed with a light output greater than 3 mW and a slope efficiency of 0.12 mW/mA.

原文	English
頁（從 - 到）	456-458
頁數	3
期刊	IEEE Photonics Technology Letters
卷	2
發行號	7
DOIs	https://doi.org/10.1109/68.56622
出版狀態	Published - 1990 7月

All Science Journal Classification (ASJC) codes

電子、光磁材料
原子與分子物理與光學
電氣與電子工程

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10.1109/68.56622

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abstract = "Vertical cavity surface emitting lasers (VCSEL) with GaAs/ AIGaAs multiple quantum well (20 wells) graded index separate confinement heterostructure (GRIN-SCH) active regions were fabricated. The VCSEL structures containing also two AlxGa1-xAs/AIyGa1-y As distributed Bragg reflectors were grown by molecular beam epitaxy and had a threshold current and current density at room temperature pulsed excitation of 16 m A and 14 kA/cm2, respectively, near 0.85 μm wavelength. Both single longitudinal and fundamental transverse mode emission characteristics were observed with a light output greater than 3 mW and a slope efficiency of 0.12 mW/mA.",

author = "Wang, {Y. H.} and K. Tai and Wynn, {J. D.} and M. Hong and Fischer, {R. J.} and Mannaerts, {J. P.} and Cho, {A. Y.}",

year = "1990",

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T1 - GaAs/AlGaAs Multiple Quantum Well GRIN-SCH Vertical Cavity Surface Emitting Laser Diodes

AU - Wang, Y. H.

AU - Tai, K.

AU - Wynn, J. D.

AU - Hong, M.

AU - Fischer, R. J.

AU - Mannaerts, J. P.

AU - Cho, A. Y.

PY - 1990/7

Y1 - 1990/7

N2 - Vertical cavity surface emitting lasers (VCSEL) with GaAs/ AIGaAs multiple quantum well (20 wells) graded index separate confinement heterostructure (GRIN-SCH) active regions were fabricated. The VCSEL structures containing also two AlxGa1-xAs/AIyGa1-y As distributed Bragg reflectors were grown by molecular beam epitaxy and had a threshold current and current density at room temperature pulsed excitation of 16 m A and 14 kA/cm2, respectively, near 0.85 μm wavelength. Both single longitudinal and fundamental transverse mode emission characteristics were observed with a light output greater than 3 mW and a slope efficiency of 0.12 mW/mA.

AB - Vertical cavity surface emitting lasers (VCSEL) with GaAs/ AIGaAs multiple quantum well (20 wells) graded index separate confinement heterostructure (GRIN-SCH) active regions were fabricated. The VCSEL structures containing also two AlxGa1-xAs/AIyGa1-y As distributed Bragg reflectors were grown by molecular beam epitaxy and had a threshold current and current density at room temperature pulsed excitation of 16 m A and 14 kA/cm2, respectively, near 0.85 μm wavelength. Both single longitudinal and fundamental transverse mode emission characteristics were observed with a light output greater than 3 mW and a slope efficiency of 0.12 mW/mA.

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

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ER -

GaAs/AlGaAs Multiple Quantum Well GRIN-SCH Vertical Cavity Surface Emitting Laser Diodes

摘要

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