GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates

D. K. Sengupta, W. Fang, J. I. Malin, J. Li, T. Horton, A. P. Curtis, K. C. Hsieh, S. L. Chuang, H. Chen, M. Feng, G. E. Stillman, L. Li, H. C. Liu, K. M.S.V. Bandara, S. D. Gunapala, W. I. Wang

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10 引文 斯高帕斯(Scopus)

摘要

In this letter, we describe the characteristics of molecular beam epitaxy GaAs/AlGaAs quantum-well infrared photodetectors (QWIP's) grown on a GaAs substrate, and on a GaAs-on-Si substrate produced by metalorganic chemical-vapor deposition. Important issues for QWIP applications such as dark current, spectral response, and absolute responsivity are studied. We find that compared to a similar detector structure grown on a GaAs substrate, the detector grown on a GaAs-on-Si substrate exhibits similar dark current and absolute responsivity while displaying a small blueshift in the spectral response.

原文English
頁(從 - 到)78-80
頁數3
期刊Applied Physics Letters
71
發行號1
DOIs
出版狀態Published - 1997 七月 7

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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