GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates

D. K. Sengupta; W. Fang; J. I. Malin; J. Li; T. Horton; A. P. Curtis; K. C. Hsieh; S. L. Chuang; H. Chen; M. Feng; G. E. Stillman; L. Li; H. C. Liu; K. M.S.V. Bandara; S. D. Gunapala; W. I. Wang

doi:10.1063/1.119473

GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates

D. K. Sengupta, W. Fang, J. I. Malin, J. Li, T. Horton, A. P. Curtis, K. C. Hsieh, S. L. Chuang, H. Chen, M. Feng, G. E. Stillman, L. Li, H. C. Liu, K. M.S.V. Bandara, S. D. Gunapala, W. I. Wang

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11 引文斯高帕斯（Scopus）

摘要

In this letter, we describe the characteristics of molecular beam epitaxy GaAs/AlGaAs quantum-well infrared photodetectors (QWIP's) grown on a GaAs substrate, and on a GaAs-on-Si substrate produced by metalorganic chemical-vapor deposition. Important issues for QWIP applications such as dark current, spectral response, and absolute responsivity are studied. We find that compared to a similar detector structure grown on a GaAs substrate, the detector grown on a GaAs-on-Si substrate exhibits similar dark current and absolute responsivity while displaying a small blueshift in the spectral response.

原文	English
頁（從 - 到）	78-80
頁數	3
期刊	Applied Physics Letters
卷	71
發行號	1
DOIs	https://doi.org/10.1063/1.119473
出版狀態	Published - 1997 7月 7

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.119473

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title = "GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates",

abstract = "In this letter, we describe the characteristics of molecular beam epitaxy GaAs/AlGaAs quantum-well infrared photodetectors (QWIP's) grown on a GaAs substrate, and on a GaAs-on-Si substrate produced by metalorganic chemical-vapor deposition. Important issues for QWIP applications such as dark current, spectral response, and absolute responsivity are studied. We find that compared to a similar detector structure grown on a GaAs substrate, the detector grown on a GaAs-on-Si substrate exhibits similar dark current and absolute responsivity while displaying a small blueshift in the spectral response.",

author = "Sengupta, {D. K.} and W. Fang and Malin, {J. I.} and J. Li and T. Horton and Curtis, {A. P.} and Hsieh, {K. C.} and Chuang, {S. L.} and H. Chen and M. Feng and Stillman, {G. E.} and L. Li and Liu, {H. C.} and Bandara, {K. M.S.V.} and Gunapala, {S. D.} and Wang, {W. I.}",

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doi = "10.1063/1.119473",

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T1 - GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates

AU - Sengupta, D. K.

AU - Fang, W.

AU - Malin, J. I.

AU - Li, J.

AU - Horton, T.

AU - Curtis, A. P.

AU - Hsieh, K. C.

AU - Chuang, S. L.

AU - Chen, H.

AU - Feng, M.

AU - Stillman, G. E.

AU - Li, L.

AU - Liu, H. C.

AU - Bandara, K. M.S.V.

AU - Gunapala, S. D.

AU - Wang, W. I.

PY - 1997/7/7

Y1 - 1997/7/7

N2 - In this letter, we describe the characteristics of molecular beam epitaxy GaAs/AlGaAs quantum-well infrared photodetectors (QWIP's) grown on a GaAs substrate, and on a GaAs-on-Si substrate produced by metalorganic chemical-vapor deposition. Important issues for QWIP applications such as dark current, spectral response, and absolute responsivity are studied. We find that compared to a similar detector structure grown on a GaAs substrate, the detector grown on a GaAs-on-Si substrate exhibits similar dark current and absolute responsivity while displaying a small blueshift in the spectral response.

AB - In this letter, we describe the characteristics of molecular beam epitaxy GaAs/AlGaAs quantum-well infrared photodetectors (QWIP's) grown on a GaAs substrate, and on a GaAs-on-Si substrate produced by metalorganic chemical-vapor deposition. Important issues for QWIP applications such as dark current, spectral response, and absolute responsivity are studied. We find that compared to a similar detector structure grown on a GaAs substrate, the detector grown on a GaAs-on-Si substrate exhibits similar dark current and absolute responsivity while displaying a small blueshift in the spectral response.

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JF - Applied Physics Letters

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GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates

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