GaInN light-emitting diodes with omni directional reflectors

Th Gessmann, Y. L. Li, E. F. Schubert, J. W. Graff, J. K. Sheu

研究成果: Conference article

12 引文 斯高帕斯(Scopus)

摘要

A high-reflectivity omni directional reflector (ODR) has been incorporated into a GaInN light-emitting diode (LED) structure. The ODR comprises a transparent, electrically conductive quarter-wave layer of indium tin oxide clad by silver and serves as an ohmic contact to p-type GaN. It is shown that ODR-LEDs have low optical losses and high extraction efficiency. Mesa-structure GaInN / GaN ODR-LEDs emitting in the blue wavelength range are demonstrated and compared to GaInN / GaN LEDs with semitransparent Ni / Au top contacts. The extraction efficiency of ODR-LEDs is higher as compared to conventional LEDs with Ni / Au contacts.

原文English
頁(從 - 到)139-144
頁數6
期刊Proceedings of SPIE - The International Society for Optical Engineering
4996
DOIs
出版狀態Published - 2003 九月 29
事件Light-Emitting Diodes: Research, Manufacturing, and Applications VII - San Jose, CA, United States
持續時間: 2003 一月 272003 一月 29

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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