GaInNAs p-i-n photodetectors with multiquantum wells structure

Yung Feng Chen, Wei Cheng Chen, Wen-Kuei Chuang, Yan Kuin Su, Huo Lieh Tsai

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

GaInNAs/GaAs p-i-n photodetectors with 3 and 15 periods multiquantum wells (MQW) as the i-layer have been grown by metal-organic vapor-phase epitaxy (MOVPE). The cutoff wavelength of spectral responsivity occurs at around 1150nm and reflects the transition energy of the GaInNAs/GaAs MQW. Because of to the good crystal quality that the devices with three periods MQW have, a two orders of magnitude increase in the responsivity rejection ratio is realized between 1150 and 1250 nm at a reverse bias of 2.0 V. The junction breakdown voltage is obtained at a reverse bias of 18.4 V. The ideality factor indicates that the conduction mechanism is dominated by the diffusion process, and the defect scattering effect caused by the misfit dislocations is only slight. On the other hand, the device with 15 periods MQW induces a higher value of misfit dislocations, and shows a partial relaxation phenomenon and thus it shows relatively poor characteristics.

原文English
頁(從 - 到)2982-2986
頁數5
期刊Japanese Journal of Applied Physics
47
發行號4 PART 2
DOIs
出版狀態Published - 2008 四月 25

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

指紋

深入研究「GaInNAs p-i-n photodetectors with multiquantum wells structure」主題。共同形成了獨特的指紋。

引用此