GaN-based blue light-emitting diodes with an electron transmission layer

J. S. Jheng, C. K. Wang, Y. Z. Chiou, S. P. Chang, S. J. Chang

研究成果: Article

1 引文 (Scopus)

摘要

In this study, GaN-based blue light-emitting diodes (LEDs) with an n-GaN electron transmission layer (ETL) grown between prestrain layer and multiple quantum wells region were fabricated and investigated. As the thickness of ETL increased from 15 to 45 nm, the LEDs generated a 2DEG-like structure with better current spreading ability presented a lower forward voltage of 3.18 V, the light output power (LOP) was improved by 12.5%, and efficiency droop was less than the others. However, as the concentration of ETL increased from 2 × 1018 to 5 × 1018 cm−3, the LEDs performed an obvious decrease in LOP and increase in efficiency droop due to the serious electron overflow. On the other hand, the low temperature electroluminescence and hot/cold factors of LEDs with 45-nm-thick ETL also exhibited better properties, and its hot/cold factor was still quite high (0.87) even at an injection current of 700 mA.

原文English
頁(從 - 到)R154-R157
期刊ECS Journal of Solid State Science and Technology
6
發行號10
DOIs
出版狀態Published - 2017 一月 1

指紋

Light emitting diodes
Electrons
Two dimensional electron gas
Electroluminescence
Semiconductor quantum wells
Electric potential
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

引用此文

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title = "GaN-based blue light-emitting diodes with an electron transmission layer",
abstract = "In this study, GaN-based blue light-emitting diodes (LEDs) with an n-GaN electron transmission layer (ETL) grown between prestrain layer and multiple quantum wells region were fabricated and investigated. As the thickness of ETL increased from 15 to 45 nm, the LEDs generated a 2DEG-like structure with better current spreading ability presented a lower forward voltage of 3.18 V, the light output power (LOP) was improved by 12.5{\%}, and efficiency droop was less than the others. However, as the concentration of ETL increased from 2 × 1018 to 5 × 1018 cm−3, the LEDs performed an obvious decrease in LOP and increase in efficiency droop due to the serious electron overflow. On the other hand, the low temperature electroluminescence and hot/cold factors of LEDs with 45-nm-thick ETL also exhibited better properties, and its hot/cold factor was still quite high (0.87) even at an injection current of 700 mA.",
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GaN-based blue light-emitting diodes with an electron transmission layer. / Jheng, J. S.; Wang, C. K.; Chiou, Y. Z.; Chang, S. P.; Chang, S. J.

於: ECS Journal of Solid State Science and Technology, 卷 6, 編號 10, 01.01.2017, p. R154-R157.

研究成果: Article

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AU - Wang, C. K.

AU - Chiou, Y. Z.

AU - Chang, S. P.

AU - Chang, S. J.

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N2 - In this study, GaN-based blue light-emitting diodes (LEDs) with an n-GaN electron transmission layer (ETL) grown between prestrain layer and multiple quantum wells region were fabricated and investigated. As the thickness of ETL increased from 15 to 45 nm, the LEDs generated a 2DEG-like structure with better current spreading ability presented a lower forward voltage of 3.18 V, the light output power (LOP) was improved by 12.5%, and efficiency droop was less than the others. However, as the concentration of ETL increased from 2 × 1018 to 5 × 1018 cm−3, the LEDs performed an obvious decrease in LOP and increase in efficiency droop due to the serious electron overflow. On the other hand, the low temperature electroluminescence and hot/cold factors of LEDs with 45-nm-thick ETL also exhibited better properties, and its hot/cold factor was still quite high (0.87) even at an injection current of 700 mA.

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