GaN-based dual-color LEDs with p-type insertion layer for controlling the ratio of two-color intensities

Kai Lun Chi, Shu Ting Yeh, Yu Hsiang Yeh, Kun Yan Lin, Jin Wei Shi, Yuh Renn Wu, Ming Lun Lee, Jinn Kong Sheu

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

In this paper, a novel GaN-based dual-color LED for phosphor-free white-light generation has been demonstrated. By inserting p-type layers with different p-type doping density and thickness into active regions of dual-color GaN LEDs, we can control the ratio of output light intensities from quantum-wells near n- and p-sides. With an optimum sheet charge density of such insertion layer, the intensities of these two colors can be balanced under a much lower driving-current density (45 versus 450 A/cm2) compared with that of reference device without such insertion layer. A 2-D finite-element Poisson and drift-diffusion self-consistent solver including the indium fluctuation is used to design and simulate the device performances. The experimental and simulation results match very well.

原文English
文章編號6565358
頁(從 - 到)2821-2826
頁數6
期刊IEEE Transactions on Electron Devices
60
發行號9
DOIs
出版狀態Published - 2013 七月 29

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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