GaN-Based Dual-Color Light-Emitting Diodes with a Hybrid Tunnel Junction Structure

Wei Heng Lin, Shoou-Jinn Chang, Wei Shou Chen

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

The authors propose the use of tunnel junction (TJ) structure to cascade a green multiquantum well (MQW) active region and a blue MQW active region, and the fabrication of GaN-based dual-color light-emitting diodes (LEDs). It was found that output power observed from the TJ cascaded LED was only slightly smaller than the summation of those observed from the green LED and the blue LED. This suggests that most of the injected carriers could tunnel through the TJ and could be repeatedly used for photon generation. Furthermore, it was found that the proposed dual-color LEDs was highly reliable.

原文English
文章編號7264985
頁(從 - 到)165-170
頁數6
期刊Journal of Display Technology
12
發行號2
DOIs
出版狀態Published - 2016 二月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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