GaN-based green-light-emitting diodes with InN/GaN growth-switched InGaN wells

Wei Chih Lai, Cheng Hsiung Yen, Shoou Jinn Chang

研究成果: Article

6 引文 (Scopus)

摘要

We have demonstrated the InN/GaN growth switching of the InGaN wells of green-light-emitting diodes (LEDs). The output power of green LEDs with InN/GaN growth-switched InGaN wells (120 mA) changed by approximately 23% compared with that of green LEDs with conventional InGaN wells. However, the emission wavelength blue shift and efficiency drops of green LEDs with InN/GaN growth-switched InGaN wells (15.0nm and 44.6%, respectively) are larger than those of green LEDs with conventional InGaN wells (10.5nm and 30.7%, respectively).

原文English
文章編號102101
期刊Applied Physics Express
6
發行號10
DOIs
出版狀態Published - 2013 十月 1

指紋

Light emitting diodes
light emitting diodes
blue shift
Wavelength
output
wavelengths

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

引用此文

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title = "GaN-based green-light-emitting diodes with InN/GaN growth-switched InGaN wells",
abstract = "We have demonstrated the InN/GaN growth switching of the InGaN wells of green-light-emitting diodes (LEDs). The output power of green LEDs with InN/GaN growth-switched InGaN wells (120 mA) changed by approximately 23{\%} compared with that of green LEDs with conventional InGaN wells. However, the emission wavelength blue shift and efficiency drops of green LEDs with InN/GaN growth-switched InGaN wells (15.0nm and 44.6{\%}, respectively) are larger than those of green LEDs with conventional InGaN wells (10.5nm and 30.7{\%}, respectively).",
author = "Lai, {Wei Chih} and Yen, {Cheng Hsiung} and Chang, {Shoou Jinn}",
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AU - Lai, Wei Chih

AU - Yen, Cheng Hsiung

AU - Chang, Shoou Jinn

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Y1 - 2013/10/1

N2 - We have demonstrated the InN/GaN growth switching of the InGaN wells of green-light-emitting diodes (LEDs). The output power of green LEDs with InN/GaN growth-switched InGaN wells (120 mA) changed by approximately 23% compared with that of green LEDs with conventional InGaN wells. However, the emission wavelength blue shift and efficiency drops of green LEDs with InN/GaN growth-switched InGaN wells (15.0nm and 44.6%, respectively) are larger than those of green LEDs with conventional InGaN wells (10.5nm and 30.7%, respectively).

AB - We have demonstrated the InN/GaN growth switching of the InGaN wells of green-light-emitting diodes (LEDs). The output power of green LEDs with InN/GaN growth-switched InGaN wells (120 mA) changed by approximately 23% compared with that of green LEDs with conventional InGaN wells. However, the emission wavelength blue shift and efficiency drops of green LEDs with InN/GaN growth-switched InGaN wells (15.0nm and 44.6%, respectively) are larger than those of green LEDs with conventional InGaN wells (10.5nm and 30.7%, respectively).

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