GaN-based green-light-emitting diodes with InN/GaN growth-switched InGaN wells

Wei Chih Lai; Cheng Hsiung Yen; Shoou Jinn Chang

doi:10.7567/APEX.6.102101

GaN-based green-light-emitting diodes with InN/GaN growth-switched InGaN wells

Wei Chih Lai, Cheng Hsiung Yen, Shoou Jinn Chang

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

摘要

We have demonstrated the InN/GaN growth switching of the InGaN wells of green-light-emitting diodes (LEDs). The output power of green LEDs with InN/GaN growth-switched InGaN wells (120 mA) changed by approximately 23% compared with that of green LEDs with conventional InGaN wells. However, the emission wavelength blue shift and efficiency drops of green LEDs with InN/GaN growth-switched InGaN wells (15.0nm and 44.6%, respectively) are larger than those of green LEDs with conventional InGaN wells (10.5nm and 30.7%, respectively).

原文	English
文章編號	102101
期刊	Applied Physics Express
卷	6
發行號	10
DOIs	https://doi.org/10.7567/APEX.6.102101
出版狀態	Published - 2013 10月

All Science Journal Classification (ASJC) codes

一般工程
一般物理與天文學

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title = "GaN-based green-light-emitting diodes with InN/GaN growth-switched InGaN wells",

abstract = "We have demonstrated the InN/GaN growth switching of the InGaN wells of green-light-emitting diodes (LEDs). The output power of green LEDs with InN/GaN growth-switched InGaN wells (120 mA) changed by approximately 23% compared with that of green LEDs with conventional InGaN wells. However, the emission wavelength blue shift and efficiency drops of green LEDs with InN/GaN growth-switched InGaN wells (15.0nm and 44.6%, respectively) are larger than those of green LEDs with conventional InGaN wells (10.5nm and 30.7%, respectively).",

author = "Lai, {Wei Chih} and Yen, {Cheng Hsiung} and Chang, {Shoou Jinn}",

year = "2013",

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volume = "6",

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AU - Lai, Wei Chih

AU - Yen, Cheng Hsiung

AU - Chang, Shoou Jinn

PY - 2013/10

Y1 - 2013/10

N2 - We have demonstrated the InN/GaN growth switching of the InGaN wells of green-light-emitting diodes (LEDs). The output power of green LEDs with InN/GaN growth-switched InGaN wells (120 mA) changed by approximately 23% compared with that of green LEDs with conventional InGaN wells. However, the emission wavelength blue shift and efficiency drops of green LEDs with InN/GaN growth-switched InGaN wells (15.0nm and 44.6%, respectively) are larger than those of green LEDs with conventional InGaN wells (10.5nm and 30.7%, respectively).

AB - We have demonstrated the InN/GaN growth switching of the InGaN wells of green-light-emitting diodes (LEDs). The output power of green LEDs with InN/GaN growth-switched InGaN wells (120 mA) changed by approximately 23% compared with that of green LEDs with conventional InGaN wells. However, the emission wavelength blue shift and efficiency drops of green LEDs with InN/GaN growth-switched InGaN wells (15.0nm and 44.6%, respectively) are larger than those of green LEDs with conventional InGaN wells (10.5nm and 30.7%, respectively).

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GaN-based green-light-emitting diodes with InN/GaN growth-switched InGaN wells

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