TY - JOUR
T1 - GaN-Based High-Voltage Light-Emitting Diodes With SU-8 Passivation
AU - Li, Shuguang
AU - Lam, Kin Tak
AU - Huang, Wei Chih
AU - Chang, Shoou Jinn
N1 - Publisher Copyright:
© 2005-2012 IEEE.
PY - 2015/4/1
Y1 - 2015/4/1
N2 - The authors propose the use of SU-8 to passivate the isolation trenches of GaN-based high-voltage light-emitting diodes (HV-LEDs). Compared with the HV-LED chips prepared with pure SU-8 passivation, it was found that we could increase the production yield from ≤ 35% to ≥ 88% using properly diluted SU-8 passivation layer. It was also found that we could reduce the passivation layer thickness by diluting SU-8 with a ratio of 5:2. Furthermore, it was found that the properly diluted SU-8 could provide smooth surface, minimized crack formation, and thus larger production yield.
AB - The authors propose the use of SU-8 to passivate the isolation trenches of GaN-based high-voltage light-emitting diodes (HV-LEDs). Compared with the HV-LED chips prepared with pure SU-8 passivation, it was found that we could increase the production yield from ≤ 35% to ≥ 88% using properly diluted SU-8 passivation layer. It was also found that we could reduce the passivation layer thickness by diluting SU-8 with a ratio of 5:2. Furthermore, it was found that the properly diluted SU-8 could provide smooth surface, minimized crack formation, and thus larger production yield.
UR - http://www.scopus.com/inward/record.url?scp=84927619173&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84927619173&partnerID=8YFLogxK
U2 - 10.1109/JDT.2015.2401006
DO - 10.1109/JDT.2015.2401006
M3 - Article
AN - SCOPUS:84927619173
SN - 1551-319X
VL - 11
SP - 374
EP - 377
JO - Journal of Display Technology
JF - Journal of Display Technology
IS - 4
M1 - 7031901
ER -