GaN-based LEDs grown on cone-shaped patterned sapphire substrates with peripheral air voids by lateral etching

Nan Ming Lin, Shih Chang Shei, Shoou Jinn Chang, Wei Chih Lai, Ya Yu Yang, Wun Cin Lin, Hsin Ming Lo

研究成果: Conference contribution

摘要

In this study, the authors report that GaN-based LEDs prepared on 1.2μm, 1.4μm, and 1.7μm height of cone-shaped patterned sapphire substrates (CSPSS) with the formation of air voids at GaN/cone-shaped-patterned-sapphire- substrate interface by laser scribing and lateral etching with one-step MOCVD growth. With CSPSS, it can be seen that output powers were all significantly larger than that of LED with flat substrate (FS). Assisted by 20 min lateral etching, it was found that peripheral pyramid-like air-voids were formed on top of each cone of the CSPSS with 1.7μm height and the light output power increased by 13.8%, compared with the result of the CSPSS with 1.2μm height. Furthermore, it was also found that output power of LED prepared on 1.7μm height of CSPSS with 20 min lateral etching was 6.2 and 3.1% larger than those of LEDs prepared on 1.2μm and 1.4μm height of CSPSS with 20 min lateral etching, respectively.

原文English
主出版物標題Equipment Manufacturing Technology
頁面542-546
頁數5
DOIs
出版狀態Published - 2012 一月 1
事件2nd International Conference on Advances in Materials and Manufacturing Processes, ICAMMP 2011 - Guilin, China
持續時間: 2011 十二月 162011 十二月 18

出版系列

名字Advanced Materials Research
422
ISSN(列印)1022-6680

Other

Other2nd International Conference on Advances in Materials and Manufacturing Processes, ICAMMP 2011
國家China
城市Guilin
期間11-12-1611-12-18

指紋

Sapphire
Light emitting diodes
Cones
Etching
Substrates
Air
Metallorganic chemical vapor deposition
Lasers

All Science Journal Classification (ASJC) codes

  • Engineering(all)

引用此文

Lin, N. M., Shei, S. C., Chang, S. J., Lai, W. C., Yang, Y. Y., Lin, W. C., & Lo, H. M. (2012). GaN-based LEDs grown on cone-shaped patterned sapphire substrates with peripheral air voids by lateral etching. 於 Equipment Manufacturing Technology (頁 542-546). (Advanced Materials Research; 卷 422). https://doi.org/10.4028/www.scientific.net/AMR.422.542
Lin, Nan Ming ; Shei, Shih Chang ; Chang, Shoou Jinn ; Lai, Wei Chih ; Yang, Ya Yu ; Lin, Wun Cin ; Lo, Hsin Ming. / GaN-based LEDs grown on cone-shaped patterned sapphire substrates with peripheral air voids by lateral etching. Equipment Manufacturing Technology. 2012. 頁 542-546 (Advanced Materials Research).
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title = "GaN-based LEDs grown on cone-shaped patterned sapphire substrates with peripheral air voids by lateral etching",
abstract = "In this study, the authors report that GaN-based LEDs prepared on 1.2μm, 1.4μm, and 1.7μm height of cone-shaped patterned sapphire substrates (CSPSS) with the formation of air voids at GaN/cone-shaped-patterned-sapphire- substrate interface by laser scribing and lateral etching with one-step MOCVD growth. With CSPSS, it can be seen that output powers were all significantly larger than that of LED with flat substrate (FS). Assisted by 20 min lateral etching, it was found that peripheral pyramid-like air-voids were formed on top of each cone of the CSPSS with 1.7μm height and the light output power increased by 13.8{\%}, compared with the result of the CSPSS with 1.2μm height. Furthermore, it was also found that output power of LED prepared on 1.7μm height of CSPSS with 20 min lateral etching was 6.2 and 3.1{\%} larger than those of LEDs prepared on 1.2μm and 1.4μm height of CSPSS with 20 min lateral etching, respectively.",
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Lin, NM, Shei, SC, Chang, SJ, Lai, WC, Yang, YY, Lin, WC & Lo, HM 2012, GaN-based LEDs grown on cone-shaped patterned sapphire substrates with peripheral air voids by lateral etching. 於 Equipment Manufacturing Technology. Advanced Materials Research, 卷 422, 頁 542-546, 2nd International Conference on Advances in Materials and Manufacturing Processes, ICAMMP 2011, Guilin, China, 11-12-16. https://doi.org/10.4028/www.scientific.net/AMR.422.542

GaN-based LEDs grown on cone-shaped patterned sapphire substrates with peripheral air voids by lateral etching. / Lin, Nan Ming; Shei, Shih Chang; Chang, Shoou Jinn; Lai, Wei Chih; Yang, Ya Yu; Lin, Wun Cin; Lo, Hsin Ming.

Equipment Manufacturing Technology. 2012. p. 542-546 (Advanced Materials Research; 卷 422).

研究成果: Conference contribution

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AU - Lin, Wun Cin

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N2 - In this study, the authors report that GaN-based LEDs prepared on 1.2μm, 1.4μm, and 1.7μm height of cone-shaped patterned sapphire substrates (CSPSS) with the formation of air voids at GaN/cone-shaped-patterned-sapphire- substrate interface by laser scribing and lateral etching with one-step MOCVD growth. With CSPSS, it can be seen that output powers were all significantly larger than that of LED with flat substrate (FS). Assisted by 20 min lateral etching, it was found that peripheral pyramid-like air-voids were formed on top of each cone of the CSPSS with 1.7μm height and the light output power increased by 13.8%, compared with the result of the CSPSS with 1.2μm height. Furthermore, it was also found that output power of LED prepared on 1.7μm height of CSPSS with 20 min lateral etching was 6.2 and 3.1% larger than those of LEDs prepared on 1.2μm and 1.4μm height of CSPSS with 20 min lateral etching, respectively.

AB - In this study, the authors report that GaN-based LEDs prepared on 1.2μm, 1.4μm, and 1.7μm height of cone-shaped patterned sapphire substrates (CSPSS) with the formation of air voids at GaN/cone-shaped-patterned-sapphire- substrate interface by laser scribing and lateral etching with one-step MOCVD growth. With CSPSS, it can be seen that output powers were all significantly larger than that of LED with flat substrate (FS). Assisted by 20 min lateral etching, it was found that peripheral pyramid-like air-voids were formed on top of each cone of the CSPSS with 1.7μm height and the light output power increased by 13.8%, compared with the result of the CSPSS with 1.2μm height. Furthermore, it was also found that output power of LED prepared on 1.7μm height of CSPSS with 20 min lateral etching was 6.2 and 3.1% larger than those of LEDs prepared on 1.2μm and 1.4μm height of CSPSS with 20 min lateral etching, respectively.

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Lin NM, Shei SC, Chang SJ, Lai WC, Yang YY, Lin WC 等. GaN-based LEDs grown on cone-shaped patterned sapphire substrates with peripheral air voids by lateral etching. 於 Equipment Manufacturing Technology. 2012. p. 542-546. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.422.542