TY - GEN
T1 - GaN-based LEDs grown on cone-shaped patterned sapphire substrates with peripheral air voids by lateral etching
AU - Lin, Nan Ming
AU - Shei, Shih Chang
AU - Chang, Shoou Jinn
AU - Lai, Wei Chih
AU - Yang, Ya Yu
AU - Lin, Wun Cin
AU - Lo, Hsin Ming
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2012
Y1 - 2012
N2 - In this study, the authors report that GaN-based LEDs prepared on 1.2μm, 1.4μm, and 1.7μm height of cone-shaped patterned sapphire substrates (CSPSS) with the formation of air voids at GaN/cone-shaped-patterned-sapphire- substrate interface by laser scribing and lateral etching with one-step MOCVD growth. With CSPSS, it can be seen that output powers were all significantly larger than that of LED with flat substrate (FS). Assisted by 20 min lateral etching, it was found that peripheral pyramid-like air-voids were formed on top of each cone of the CSPSS with 1.7μm height and the light output power increased by 13.8%, compared with the result of the CSPSS with 1.2μm height. Furthermore, it was also found that output power of LED prepared on 1.7μm height of CSPSS with 20 min lateral etching was 6.2 and 3.1% larger than those of LEDs prepared on 1.2μm and 1.4μm height of CSPSS with 20 min lateral etching, respectively.
AB - In this study, the authors report that GaN-based LEDs prepared on 1.2μm, 1.4μm, and 1.7μm height of cone-shaped patterned sapphire substrates (CSPSS) with the formation of air voids at GaN/cone-shaped-patterned-sapphire- substrate interface by laser scribing and lateral etching with one-step MOCVD growth. With CSPSS, it can be seen that output powers were all significantly larger than that of LED with flat substrate (FS). Assisted by 20 min lateral etching, it was found that peripheral pyramid-like air-voids were formed on top of each cone of the CSPSS with 1.7μm height and the light output power increased by 13.8%, compared with the result of the CSPSS with 1.2μm height. Furthermore, it was also found that output power of LED prepared on 1.7μm height of CSPSS with 20 min lateral etching was 6.2 and 3.1% larger than those of LEDs prepared on 1.2μm and 1.4μm height of CSPSS with 20 min lateral etching, respectively.
UR - http://www.scopus.com/inward/record.url?scp=84255199501&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84255199501&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMR.422.542
DO - 10.4028/www.scientific.net/AMR.422.542
M3 - Conference contribution
AN - SCOPUS:84255199501
SN - 9783037853283
T3 - Advanced Materials Research
SP - 542
EP - 546
BT - Equipment Manufacturing Technology
T2 - 2nd International Conference on Advances in Materials and Manufacturing Processes, ICAMMP 2011
Y2 - 16 December 2011 through 18 December 2011
ER -