GaN-based LEDs output power improved by textured GaN/Sapphire interface using in situ SiH4 treatment process during epitaxial growth

C. M. Tsai, Jinn Kong Sheu, Wei Chih Lai, Ming Lun Lee, Shoou Jinn Chang, C. S. Chang, T. K. Ko, C. F. Shen

研究成果: Article

13 引文 斯高帕斯(Scopus)

摘要

In this study, we demonstrate an in situ roughening technique at the GaN/sapphire interface in GaN-based LEDs using a silane treatment SiH 4 treatment) process that forms a thin SiNx layer with nanometer-sized holes on the sapphire surface that behave like a patterned sapphire substrate. A plurality of voids at the GaN/sapphire interface is observed according to the transmission electron microscopy analysis. With a 20 mA current injection, the results indicate that the typical output power of LEDs grown with and without the SiH4 treatment process are approximately 18.0 and 15.6 mW, respectively. In other words, the output power can be enhanced by 15% with the use of the SiH4 treatment process. The enhancement of output power is mainly due to light scattering at the naturally textured GaN/sapphire interface, which can lead to a higher escape probability for the photons emitted from the active layer in an LED.

原文English
文章編號4799149
頁(從 - 到)1275-1280
頁數6
期刊IEEE Journal on Selected Topics in Quantum Electronics
15
發行號4
DOIs
出版狀態Published - 2009 三月 12

    指紋

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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