In this study, we demonstrate an in situ roughening technique at the GaN/sapphire interface in GaN-based LEDs using a silane treatment SiH 4 treatment) process that forms a thin SiNx layer with nanometer-sized holes on the sapphire surface that behave like a patterned sapphire substrate. A plurality of voids at the GaN/sapphire interface is observed according to the transmission electron microscopy analysis. With a 20 mA current injection, the results indicate that the typical output power of LEDs grown with and without the SiH4 treatment process are approximately 18.0 and 15.6 mW, respectively. In other words, the output power can be enhanced by 15% with the use of the SiH4 treatment process. The enhancement of output power is mainly due to light scattering at the naturally textured GaN/sapphire interface, which can lead to a higher escape probability for the photons emitted from the active layer in an LED.
|頁（從 - 到）||1275-1280|
|期刊||IEEE Journal on Selected Topics in Quantum Electronics|
|出版狀態||Published - 2009 三月 12|
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering