TY - JOUR
T1 - GaN-Based LEDs with a chirped multiquantum barrier structure
AU - Lin, Yu Yao
AU - Chuang, Ricky W.
AU - Chang, Shoou Jinn
AU - Li, Shuguang
AU - Jiao, Zhi Yong
AU - Ko, Tsun Kai
AU - Hon, S. J.
AU - Liu, C. H.
N1 - Funding Information:
Manuscript received May 4, 2012; revised July 20, 2012; accepted July 23, 2012. Date of publication August 14, 2012; date of current version August 29, 2012. This work was supported in part by the Advanced Optoelectronic Technology Center, NCKU, in part by the Research Center for Energy Technology and Strategy, NCKU, under projects from the Ministry of Education, Taiwan, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan, under Contract 100-D0204-6.
PY - 2012
Y1 - 2012
N2 - We report the fabrication of GaN-based blue light-emitting diodes (LEDs), which separately incorporate the three different electron blocking layers (EBLs), namely, a conventional AlGaN, a uniform multiquantum barrier (UMQB), and a chirped multiquantum barrier (CMQB). On the administration of 20 mA injection current, the corresponding LED output powers measured were 27.5, 27.2, and 25.4 mW for CMQB LED, UMQB LED, and LED, respectively, with a conventional AlGaN EBL. It was also found that the LED with CMQB EBL exhibited a significantly lower drooping effect and a smaller forward bias as compared with LEDs with a conventional AlGaN EBL and UMQB EBL.
AB - We report the fabrication of GaN-based blue light-emitting diodes (LEDs), which separately incorporate the three different electron blocking layers (EBLs), namely, a conventional AlGaN, a uniform multiquantum barrier (UMQB), and a chirped multiquantum barrier (CMQB). On the administration of 20 mA injection current, the corresponding LED output powers measured were 27.5, 27.2, and 25.4 mW for CMQB LED, UMQB LED, and LED, respectively, with a conventional AlGaN EBL. It was also found that the LED with CMQB EBL exhibited a significantly lower drooping effect and a smaller forward bias as compared with LEDs with a conventional AlGaN EBL and UMQB EBL.
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U2 - 10.1109/LPT.2012.2210541
DO - 10.1109/LPT.2012.2210541
M3 - Article
AN - SCOPUS:84865786107
SN - 1041-1135
VL - 24
SP - 1600
EP - 1602
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 18
M1 - 6268320
ER -