GaN-Based LEDs with a chirped multiquantum barrier structure

Yu Yao Lin, Wen-Kuei Chuang, Shoou-Jinn Chang, Shuguang Li, Zhi Yong Jiao, Tsun Kai Ko, S. J. Hon, C. H. Liu

研究成果: Article

25 引文 (Scopus)

摘要

We report the fabrication of GaN-based blue light-emitting diodes (LEDs), which separately incorporate the three different electron blocking layers (EBLs), namely, a conventional AlGaN, a uniform multiquantum barrier (UMQB), and a chirped multiquantum barrier (CMQB). On the administration of 20 mA injection current, the corresponding LED output powers measured were 27.5, 27.2, and 25.4 mW for CMQB LED, UMQB LED, and LED, respectively, with a conventional AlGaN EBL. It was also found that the LED with CMQB EBL exhibited a significantly lower drooping effect and a smaller forward bias as compared with LEDs with a conventional AlGaN EBL and UMQB EBL.

原文English
文章編號6268320
頁(從 - 到)1600-1602
頁數3
期刊IEEE Photonics Technology Letters
24
發行號18
DOIs
出版狀態Published - 2012 九月 10

指紋

Light emitting diodes
light emitting diodes
Electrons
electrons
injection
Fabrication
fabrication
output
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

引用此文

Lin, Yu Yao ; Chuang, Wen-Kuei ; Chang, Shoou-Jinn ; Li, Shuguang ; Jiao, Zhi Yong ; Ko, Tsun Kai ; Hon, S. J. ; Liu, C. H. / GaN-Based LEDs with a chirped multiquantum barrier structure. 於: IEEE Photonics Technology Letters. 2012 ; 卷 24, 編號 18. 頁 1600-1602.
@article{c708672a2a454bbabc6bd63a774963c4,
title = "GaN-Based LEDs with a chirped multiquantum barrier structure",
abstract = "We report the fabrication of GaN-based blue light-emitting diodes (LEDs), which separately incorporate the three different electron blocking layers (EBLs), namely, a conventional AlGaN, a uniform multiquantum barrier (UMQB), and a chirped multiquantum barrier (CMQB). On the administration of 20 mA injection current, the corresponding LED output powers measured were 27.5, 27.2, and 25.4 mW for CMQB LED, UMQB LED, and LED, respectively, with a conventional AlGaN EBL. It was also found that the LED with CMQB EBL exhibited a significantly lower drooping effect and a smaller forward bias as compared with LEDs with a conventional AlGaN EBL and UMQB EBL.",
author = "Lin, {Yu Yao} and Wen-Kuei Chuang and Shoou-Jinn Chang and Shuguang Li and Jiao, {Zhi Yong} and Ko, {Tsun Kai} and Hon, {S. J.} and Liu, {C. H.}",
year = "2012",
month = "9",
day = "10",
doi = "10.1109/LPT.2012.2210541",
language = "English",
volume = "24",
pages = "1600--1602",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "18",

}

Lin, YY, Chuang, W-K, Chang, S-J, Li, S, Jiao, ZY, Ko, TK, Hon, SJ & Liu, CH 2012, 'GaN-Based LEDs with a chirped multiquantum barrier structure', IEEE Photonics Technology Letters, 卷 24, 編號 18, 6268320, 頁 1600-1602. https://doi.org/10.1109/LPT.2012.2210541

GaN-Based LEDs with a chirped multiquantum barrier structure. / Lin, Yu Yao; Chuang, Wen-Kuei; Chang, Shoou-Jinn; Li, Shuguang; Jiao, Zhi Yong; Ko, Tsun Kai; Hon, S. J.; Liu, C. H.

於: IEEE Photonics Technology Letters, 卷 24, 編號 18, 6268320, 10.09.2012, p. 1600-1602.

研究成果: Article

TY - JOUR

T1 - GaN-Based LEDs with a chirped multiquantum barrier structure

AU - Lin, Yu Yao

AU - Chuang, Wen-Kuei

AU - Chang, Shoou-Jinn

AU - Li, Shuguang

AU - Jiao, Zhi Yong

AU - Ko, Tsun Kai

AU - Hon, S. J.

AU - Liu, C. H.

PY - 2012/9/10

Y1 - 2012/9/10

N2 - We report the fabrication of GaN-based blue light-emitting diodes (LEDs), which separately incorporate the three different electron blocking layers (EBLs), namely, a conventional AlGaN, a uniform multiquantum barrier (UMQB), and a chirped multiquantum barrier (CMQB). On the administration of 20 mA injection current, the corresponding LED output powers measured were 27.5, 27.2, and 25.4 mW for CMQB LED, UMQB LED, and LED, respectively, with a conventional AlGaN EBL. It was also found that the LED with CMQB EBL exhibited a significantly lower drooping effect and a smaller forward bias as compared with LEDs with a conventional AlGaN EBL and UMQB EBL.

AB - We report the fabrication of GaN-based blue light-emitting diodes (LEDs), which separately incorporate the three different electron blocking layers (EBLs), namely, a conventional AlGaN, a uniform multiquantum barrier (UMQB), and a chirped multiquantum barrier (CMQB). On the administration of 20 mA injection current, the corresponding LED output powers measured were 27.5, 27.2, and 25.4 mW for CMQB LED, UMQB LED, and LED, respectively, with a conventional AlGaN EBL. It was also found that the LED with CMQB EBL exhibited a significantly lower drooping effect and a smaller forward bias as compared with LEDs with a conventional AlGaN EBL and UMQB EBL.

UR - http://www.scopus.com/inward/record.url?scp=84865786107&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84865786107&partnerID=8YFLogxK

U2 - 10.1109/LPT.2012.2210541

DO - 10.1109/LPT.2012.2210541

M3 - Article

AN - SCOPUS:84865786107

VL - 24

SP - 1600

EP - 1602

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 18

M1 - 6268320

ER -