GaN-based LEDs with a mirror structure and an insulating layer

Nan Ming Lin; Shih Chang Shei; Shoou Jinn Chang

doi:10.1109/SOPO.2012.6270550

GaN-based LEDs with a mirror structure and an insulating layer

Nan Ming Lin, Shih Chang Shei, Shoou Jinn Chang

研究成果: Conference contribution

摘要

In this study, we report the GaN-based LEDs with Ni/Ag (1nm/100nm) layers underneath an insulating SiO2 layer. It is confirmed that the Ni/Ag mirror shows good thermal stability and the reflectance of Ni/Ag is 90.6 % after thermal annealing at 500°C for 5 min. We can not only achieve much better current spreading but also prevent the light absorption by the opaque p-pad electrode. With 20 mA current injection, it was found that output power of the LEDs with SiO2/Ni/Ag layers was 6.5 and 12.1% larger than those of the LEDs with a SiO2 layer and without the SiO2 layer, respectively. Furthermore, the 20 mA forward voltage only increased slightly from 3.03 to 3.07 V for the LEDs with SiO2/Ni/Ag layers.

原文	English
主出版物標題	2012 Symposium on Photonics and Optoelectronics, SOPO 2012
DOIs	https://doi.org/10.1109/SOPO.2012.6270550
出版狀態	Published - 2012
事件	2012 International Symposium on Photonics and Optoelectronics, SOPO 2012 - Shanghai, China 持續時間: 2012 五月 21 → 2012 五月 23

出版系列

名字	2012 Symposium on Photonics and Optoelectronics, SOPO 2012

Other

Other	2012 International Symposium on Photonics and Optoelectronics, SOPO 2012
國家	China
城市	Shanghai
期間	12-05-21 → 12-05-23

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

存取文件

10.1109/SOPO.2012.6270550

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引用此

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title = "GaN-based LEDs with a mirror structure and an insulating layer",

abstract = "In this study, we report the GaN-based LEDs with Ni/Ag (1nm/100nm) layers underneath an insulating SiO2 layer. It is confirmed that the Ni/Ag mirror shows good thermal stability and the reflectance of Ni/Ag is 90.6 % after thermal annealing at 500°C for 5 min. We can not only achieve much better current spreading but also prevent the light absorption by the opaque p-pad electrode. With 20 mA current injection, it was found that output power of the LEDs with SiO2/Ni/Ag layers was 6.5 and 12.1% larger than those of the LEDs with a SiO2 layer and without the SiO2 layer, respectively. Furthermore, the 20 mA forward voltage only increased slightly from 3.03 to 3.07 V for the LEDs with SiO2/Ni/Ag layers.",

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Lin, NM, Shei, SC & Chang, SJ 2012, GaN-based LEDs with a mirror structure and an insulating layer. 於 2012 Symposium on Photonics and Optoelectronics, SOPO 2012., 6270550, 2012 Symposium on Photonics and Optoelectronics, SOPO 2012, 2012 International Symposium on Photonics and Optoelectronics, SOPO 2012, Shanghai, China, 12-05-21. https://doi.org/10.1109/SOPO.2012.6270550

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AU - Lin, Nan Ming

AU - Shei, Shih Chang

AU - Chang, Shoou Jinn

PY - 2012

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N2 - In this study, we report the GaN-based LEDs with Ni/Ag (1nm/100nm) layers underneath an insulating SiO2 layer. It is confirmed that the Ni/Ag mirror shows good thermal stability and the reflectance of Ni/Ag is 90.6 % after thermal annealing at 500°C for 5 min. We can not only achieve much better current spreading but also prevent the light absorption by the opaque p-pad electrode. With 20 mA current injection, it was found that output power of the LEDs with SiO2/Ni/Ag layers was 6.5 and 12.1% larger than those of the LEDs with a SiO2 layer and without the SiO2 layer, respectively. Furthermore, the 20 mA forward voltage only increased slightly from 3.03 to 3.07 V for the LEDs with SiO2/Ni/Ag layers.

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