GaN-based LEDs with a mirror structure and an insulating layer

Nan Ming Lin, Shih Chang Shei, Shoou Jinn Chang

研究成果: Conference contribution

摘要

In this study, we report the GaN-based LEDs with Ni/Ag (1nm/100nm) layers underneath an insulating SiO2 layer. It is confirmed that the Ni/Ag mirror shows good thermal stability and the reflectance of Ni/Ag is 90.6 % after thermal annealing at 500°C for 5 min. We can not only achieve much better current spreading but also prevent the light absorption by the opaque p-pad electrode. With 20 mA current injection, it was found that output power of the LEDs with SiO2/Ni/Ag layers was 6.5 and 12.1% larger than those of the LEDs with a SiO2 layer and without the SiO2 layer, respectively. Furthermore, the 20 mA forward voltage only increased slightly from 3.03 to 3.07 V for the LEDs with SiO2/Ni/Ag layers.

原文English
主出版物標題2012 Symposium on Photonics and Optoelectronics, SOPO 2012
DOIs
出版狀態Published - 2012 十月 22
事件2012 International Symposium on Photonics and Optoelectronics, SOPO 2012 - Shanghai, China
持續時間: 2012 五月 212012 五月 23

出版系列

名字2012 Symposium on Photonics and Optoelectronics, SOPO 2012

Other

Other2012 International Symposium on Photonics and Optoelectronics, SOPO 2012
國家China
城市Shanghai
期間12-05-2112-05-23

指紋

Light emitting diodes
Mirrors
Light absorption
Thermodynamic stability
Annealing
Electrodes
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

引用此文

Lin, N. M., Shei, S. C., & Chang, S. J. (2012). GaN-based LEDs with a mirror structure and an insulating layer. 於 2012 Symposium on Photonics and Optoelectronics, SOPO 2012 [6270550] (2012 Symposium on Photonics and Optoelectronics, SOPO 2012). https://doi.org/10.1109/SOPO.2012.6270550
Lin, Nan Ming ; Shei, Shih Chang ; Chang, Shoou Jinn. / GaN-based LEDs with a mirror structure and an insulating layer. 2012 Symposium on Photonics and Optoelectronics, SOPO 2012. 2012. (2012 Symposium on Photonics and Optoelectronics, SOPO 2012).
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title = "GaN-based LEDs with a mirror structure and an insulating layer",
abstract = "In this study, we report the GaN-based LEDs with Ni/Ag (1nm/100nm) layers underneath an insulating SiO2 layer. It is confirmed that the Ni/Ag mirror shows good thermal stability and the reflectance of Ni/Ag is 90.6 {\%} after thermal annealing at 500°C for 5 min. We can not only achieve much better current spreading but also prevent the light absorption by the opaque p-pad electrode. With 20 mA current injection, it was found that output power of the LEDs with SiO2/Ni/Ag layers was 6.5 and 12.1{\%} larger than those of the LEDs with a SiO2 layer and without the SiO2 layer, respectively. Furthermore, the 20 mA forward voltage only increased slightly from 3.03 to 3.07 V for the LEDs with SiO2/Ni/Ag layers.",
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Lin, NM, Shei, SC & Chang, SJ 2012, GaN-based LEDs with a mirror structure and an insulating layer. 於 2012 Symposium on Photonics and Optoelectronics, SOPO 2012., 6270550, 2012 Symposium on Photonics and Optoelectronics, SOPO 2012, 2012 International Symposium on Photonics and Optoelectronics, SOPO 2012, Shanghai, China, 12-05-21. https://doi.org/10.1109/SOPO.2012.6270550

GaN-based LEDs with a mirror structure and an insulating layer. / Lin, Nan Ming; Shei, Shih Chang; Chang, Shoou Jinn.

2012 Symposium on Photonics and Optoelectronics, SOPO 2012. 2012. 6270550 (2012 Symposium on Photonics and Optoelectronics, SOPO 2012).

研究成果: Conference contribution

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AU - Shei, Shih Chang

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N2 - In this study, we report the GaN-based LEDs with Ni/Ag (1nm/100nm) layers underneath an insulating SiO2 layer. It is confirmed that the Ni/Ag mirror shows good thermal stability and the reflectance of Ni/Ag is 90.6 % after thermal annealing at 500°C for 5 min. We can not only achieve much better current spreading but also prevent the light absorption by the opaque p-pad electrode. With 20 mA current injection, it was found that output power of the LEDs with SiO2/Ni/Ag layers was 6.5 and 12.1% larger than those of the LEDs with a SiO2 layer and without the SiO2 layer, respectively. Furthermore, the 20 mA forward voltage only increased slightly from 3.03 to 3.07 V for the LEDs with SiO2/Ni/Ag layers.

AB - In this study, we report the GaN-based LEDs with Ni/Ag (1nm/100nm) layers underneath an insulating SiO2 layer. It is confirmed that the Ni/Ag mirror shows good thermal stability and the reflectance of Ni/Ag is 90.6 % after thermal annealing at 500°C for 5 min. We can not only achieve much better current spreading but also prevent the light absorption by the opaque p-pad electrode. With 20 mA current injection, it was found that output power of the LEDs with SiO2/Ni/Ag layers was 6.5 and 12.1% larger than those of the LEDs with a SiO2 layer and without the SiO2 layer, respectively. Furthermore, the 20 mA forward voltage only increased slightly from 3.03 to 3.07 V for the LEDs with SiO2/Ni/Ag layers.

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Lin NM, Shei SC, Chang SJ. GaN-based LEDs with a mirror structure and an insulating layer. 於 2012 Symposium on Photonics and Optoelectronics, SOPO 2012. 2012. 6270550. (2012 Symposium on Photonics and Optoelectronics, SOPO 2012). https://doi.org/10.1109/SOPO.2012.6270550