摘要
In this study, we report the GaN-based LEDs with Ni/Ag (1nm/100nm) layers underneath an insulating SiO2 layer. It is confirmed that the Ni/Ag mirror shows good thermal stability and the reflectance of Ni/Ag is 90.6 % after thermal annealing at 500°C for 5 min. We can not only achieve much better current spreading but also prevent the light absorption by the opaque p-pad electrode. With 20 mA current injection, it was found that output power of the LEDs with SiO2/Ni/Ag layers was 6.5 and 12.1% larger than those of the LEDs with a SiO2 layer and without the SiO2 layer, respectively. Furthermore, the 20 mA forward voltage only increased slightly from 3.03 to 3.07 V for the LEDs with SiO2/Ni/Ag layers.
| 原文 | English |
|---|---|
| 主出版物標題 | 2012 Symposium on Photonics and Optoelectronics, SOPO 2012 |
| DOIs | |
| 出版狀態 | Published - 2012 十月 22 |
| 事件 | 2012 International Symposium on Photonics and Optoelectronics, SOPO 2012 - Shanghai, China 持續時間: 2012 五月 21 → 2012 五月 23 |
出版系列
| 名字 | 2012 Symposium on Photonics and Optoelectronics, SOPO 2012 |
|---|
Other
| Other | 2012 International Symposium on Photonics and Optoelectronics, SOPO 2012 |
|---|---|
| 國家 | China |
| 城市 | Shanghai |
| 期間 | 12-05-21 → 12-05-23 |
指紋
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
引用此文
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GaN-based LEDs with a mirror structure and an insulating layer. / Lin, Nan Ming; Shei, Shih Chang; Chang, Shoou Jinn.
2012 Symposium on Photonics and Optoelectronics, SOPO 2012. 2012. 6270550 (2012 Symposium on Photonics and Optoelectronics, SOPO 2012).研究成果: Conference contribution
TY - GEN
T1 - GaN-based LEDs with a mirror structure and an insulating layer
AU - Lin, Nan Ming
AU - Shei, Shih Chang
AU - Chang, Shoou Jinn
PY - 2012/10/22
Y1 - 2012/10/22
N2 - In this study, we report the GaN-based LEDs with Ni/Ag (1nm/100nm) layers underneath an insulating SiO2 layer. It is confirmed that the Ni/Ag mirror shows good thermal stability and the reflectance of Ni/Ag is 90.6 % after thermal annealing at 500°C for 5 min. We can not only achieve much better current spreading but also prevent the light absorption by the opaque p-pad electrode. With 20 mA current injection, it was found that output power of the LEDs with SiO2/Ni/Ag layers was 6.5 and 12.1% larger than those of the LEDs with a SiO2 layer and without the SiO2 layer, respectively. Furthermore, the 20 mA forward voltage only increased slightly from 3.03 to 3.07 V for the LEDs with SiO2/Ni/Ag layers.
AB - In this study, we report the GaN-based LEDs with Ni/Ag (1nm/100nm) layers underneath an insulating SiO2 layer. It is confirmed that the Ni/Ag mirror shows good thermal stability and the reflectance of Ni/Ag is 90.6 % after thermal annealing at 500°C for 5 min. We can not only achieve much better current spreading but also prevent the light absorption by the opaque p-pad electrode. With 20 mA current injection, it was found that output power of the LEDs with SiO2/Ni/Ag layers was 6.5 and 12.1% larger than those of the LEDs with a SiO2 layer and without the SiO2 layer, respectively. Furthermore, the 20 mA forward voltage only increased slightly from 3.03 to 3.07 V for the LEDs with SiO2/Ni/Ag layers.
UR - http://www.scopus.com/inward/record.url?scp=84867507131&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84867507131&partnerID=8YFLogxK
U2 - 10.1109/SOPO.2012.6270550
DO - 10.1109/SOPO.2012.6270550
M3 - Conference contribution
AN - SCOPUS:84867507131
SN - 9781457709111
T3 - 2012 Symposium on Photonics and Optoelectronics, SOPO 2012
BT - 2012 Symposium on Photonics and Optoelectronics, SOPO 2012
ER -