TY - GEN
T1 - GaN-based LEDs with a mirror structure and an insulating layer
AU - Lin, Nan Ming
AU - Shei, Shih Chang
AU - Chang, Shoou Jinn
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2012
Y1 - 2012
N2 - In this study, we report the GaN-based LEDs with Ni/Ag (1nm/100nm) layers underneath an insulating SiO2 layer. It is confirmed that the Ni/Ag mirror shows good thermal stability and the reflectance of Ni/Ag is 90.6 % after thermal annealing at 500°C for 5 min. We can not only achieve much better current spreading but also prevent the light absorption by the opaque p-pad electrode. With 20 mA current injection, it was found that output power of the LEDs with SiO2/Ni/Ag layers was 6.5 and 12.1% larger than those of the LEDs with a SiO2 layer and without the SiO2 layer, respectively. Furthermore, the 20 mA forward voltage only increased slightly from 3.03 to 3.07 V for the LEDs with SiO2/Ni/Ag layers.
AB - In this study, we report the GaN-based LEDs with Ni/Ag (1nm/100nm) layers underneath an insulating SiO2 layer. It is confirmed that the Ni/Ag mirror shows good thermal stability and the reflectance of Ni/Ag is 90.6 % after thermal annealing at 500°C for 5 min. We can not only achieve much better current spreading but also prevent the light absorption by the opaque p-pad electrode. With 20 mA current injection, it was found that output power of the LEDs with SiO2/Ni/Ag layers was 6.5 and 12.1% larger than those of the LEDs with a SiO2 layer and without the SiO2 layer, respectively. Furthermore, the 20 mA forward voltage only increased slightly from 3.03 to 3.07 V for the LEDs with SiO2/Ni/Ag layers.
UR - http://www.scopus.com/inward/record.url?scp=84867507131&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84867507131&partnerID=8YFLogxK
U2 - 10.1109/SOPO.2012.6270550
DO - 10.1109/SOPO.2012.6270550
M3 - Conference contribution
AN - SCOPUS:84867507131
SN - 9781457709111
T3 - 2012 Symposium on Photonics and Optoelectronics, SOPO 2012
BT - 2012 Symposium on Photonics and Optoelectronics, SOPO 2012
T2 - 2012 International Symposium on Photonics and Optoelectronics, SOPO 2012
Y2 - 21 May 2012 through 23 May 2012
ER -