GaN-based LEDs with air voids prepared by laser scribing and chemical etching

研究成果: Conference contribution

摘要

The authors report the formation of air-voids at GaN/cone-shaped-patterned- sapphire-substrate interface by laser scribing and lateral etching with one-step growth. With 5 and 20 min lateral etching, it was found that pyramid-like airvoid was formed with an average height of 0.98 and 1.9 μm, respectively, on top of each corn of the substrate. It was also found that we can enhance output power of GaN-based light-emitting diodes by 6.6 and 11.5%, respectively, by immersing the wafer in a mixture of H 3PO 4 and H 2SO 4 solution at 220°C for 5 and 20 min, respectively.

原文English
主出版物標題Light-Emitting Diodes
主出版物子標題Materials, Devices, and Applications for Solid State Lighting XVI
DOIs
出版狀態Published - 2012 三月 5
事件Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI - San Francisco, CA, United States
持續時間: 2012 一月 242012 一月 26

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
8278
ISSN(列印)0277-786X

Other

OtherLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI
國家/地區United States
城市San Francisco, CA
期間12-01-2412-01-26

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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