TY - GEN
T1 - GaN-based LEDs with air voids prepared by laser scribing and chemical etching
AU - Chang, S. J.
PY - 2012
Y1 - 2012
N2 - The authors report the formation of air-voids at GaN/cone-shaped-patterned- sapphire-substrate interface by laser scribing and lateral etching with one-step growth. With 5 and 20 min lateral etching, it was found that pyramid-like airvoid was formed with an average height of 0.98 and 1.9 μm, respectively, on top of each corn of the substrate. It was also found that we can enhance output power of GaN-based light-emitting diodes by 6.6 and 11.5%, respectively, by immersing the wafer in a mixture of H 3PO 4 and H 2SO 4 solution at 220°C for 5 and 20 min, respectively.
AB - The authors report the formation of air-voids at GaN/cone-shaped-patterned- sapphire-substrate interface by laser scribing and lateral etching with one-step growth. With 5 and 20 min lateral etching, it was found that pyramid-like airvoid was formed with an average height of 0.98 and 1.9 μm, respectively, on top of each corn of the substrate. It was also found that we can enhance output power of GaN-based light-emitting diodes by 6.6 and 11.5%, respectively, by immersing the wafer in a mixture of H 3PO 4 and H 2SO 4 solution at 220°C for 5 and 20 min, respectively.
UR - http://www.scopus.com/inward/record.url?scp=84863249056&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84863249056&partnerID=8YFLogxK
U2 - 10.1117/12.913294
DO - 10.1117/12.913294
M3 - Conference contribution
AN - SCOPUS:84863249056
SN - 9780819489210
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Light-Emitting Diodes
T2 - Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI
Y2 - 24 January 2012 through 26 January 2012
ER -