GaN-based LEDs with air voids prepared by laser scribing and chemical etching

研究成果: Conference contribution

摘要

The authors report the formation of air-voids at GaN/cone-shaped-patterned- sapphire-substrate interface by laser scribing and lateral etching with one-step growth. With 5 and 20 min lateral etching, it was found that pyramid-like airvoid was formed with an average height of 0.98 and 1.9 μm, respectively, on top of each corn of the substrate. It was also found that we can enhance output power of GaN-based light-emitting diodes by 6.6 and 11.5%, respectively, by immersing the wafer in a mixture of H 3PO 4 and H 2SO 4 solution at 220°C for 5 and 20 min, respectively.

原文English
主出版物標題Light-Emitting Diodes
主出版物子標題Materials, Devices, and Applications for Solid State Lighting XVI
DOIs
出版狀態Published - 2012 三月 5
事件Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI - San Francisco, CA, United States
持續時間: 2012 一月 242012 一月 26

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
8278
ISSN(列印)0277-786X

Other

OtherLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI
國家United States
城市San Francisco, CA
期間12-01-2412-01-26

指紋

scoring
Etching
Voids
Light emitting diodes
voids
Lateral
light emitting diodes
Substrate
etching
Laser
corn
Corn
Lasers
Aluminum Oxide
Sapphire
air
Pyramid
Substrates
Air
pyramids

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

引用此文

Chang, S. J. (2012). GaN-based LEDs with air voids prepared by laser scribing and chemical etching. 於 Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI [82781E] (Proceedings of SPIE - The International Society for Optical Engineering; 卷 8278). https://doi.org/10.1117/12.913294
Chang, S. J. / GaN-based LEDs with air voids prepared by laser scribing and chemical etching. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI. 2012. (Proceedings of SPIE - The International Society for Optical Engineering).
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Chang, SJ 2012, GaN-based LEDs with air voids prepared by laser scribing and chemical etching. 於 Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI., 82781E, Proceedings of SPIE - The International Society for Optical Engineering, 卷 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, San Francisco, CA, United States, 12-01-24. https://doi.org/10.1117/12.913294

GaN-based LEDs with air voids prepared by laser scribing and chemical etching. / Chang, S. J.

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI. 2012. 82781E (Proceedings of SPIE - The International Society for Optical Engineering; 卷 8278).

研究成果: Conference contribution

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Chang SJ. GaN-based LEDs with air voids prepared by laser scribing and chemical etching. 於 Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI. 2012. 82781E. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.913294