TY - JOUR
T1 - GaN-based LEDs with air voids prepared by laser scribing and chemical etching
AU - Shei, S. C.
AU - Lo, H. M.
AU - Lai, W. C.
AU - Lin, W. C.
AU - Chang, S. J.
N1 - Funding Information:
Manuscript received March 01, 2011; revised April 06, 2011; accepted May 21, 2011. Date of publication May 31, 2011; date of current version July 27, 2011. This work was granted in part by the Center for Frontier Materials and Micro/Nano Science and Technology, in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU), under projects from the Ministry of Education, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan under Contract 98-D0204-6.
PY - 2011
Y1 - 2011
N2 - The authors report the formation of air-voids at the GaN/cone-shaped- patterned-sapphire-substrate interface by laser scribing and lateral etching with one-step growth. With 5- and 20-min lateral etching, it was found that pyramid-like air-void was formed with an average height of 0.98 and 1.9 μm, respectively, on top of each corn of the substrate. It was also found that we can enhance output power of GaN-based light-emitting diodes by 6.6% and 11.5%, respectively, by immersing the wafer in a mixture of H3PO4 and H2SO4 solution at 220 °C for 5 and 20 min, respectively.
AB - The authors report the formation of air-voids at the GaN/cone-shaped- patterned-sapphire-substrate interface by laser scribing and lateral etching with one-step growth. With 5- and 20-min lateral etching, it was found that pyramid-like air-void was formed with an average height of 0.98 and 1.9 μm, respectively, on top of each corn of the substrate. It was also found that we can enhance output power of GaN-based light-emitting diodes by 6.6% and 11.5%, respectively, by immersing the wafer in a mixture of H3PO4 and H2SO4 solution at 220 °C for 5 and 20 min, respectively.
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U2 - 10.1109/LPT.2011.2157966
DO - 10.1109/LPT.2011.2157966
M3 - Article
AN - SCOPUS:79960988442
SN - 1041-1135
VL - 23
SP - 1172
EP - 1174
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 16
M1 - 5782933
ER -