@article{26861054eaae4b0c9268438360d59fdf,
title = "GaN-based LEDs with air voids prepared by one-step MOCVD growth",
abstract = "The authors report the formation of air voids at GaN/cone-shaped pattern sapphire substrate interface by laser scribing and lateral etching with one-step growth. With 5 and 20 min lateral etching, it was found that pyramid-like air voids were formed with an average height of 0.98 and 1.9 μm, respectively, on top of each cone of the substrate. It was also found that we can enhance LED output power by 11.5% by etching the wafers for 20 min. It was also found that the simulated results agree well with the experimentally observed data.",
author = "Lin, {N. M.} and Chang, {S. J.} and Shei, {S. C.} and Lai, {W. C.} and Yang, {Y. Y.} and Lin, {W. C.} and Lo, {H. M.}",
note = "Funding Information: Manuscript received April 15, 2011; revised July 08, 2011; accepted July 16, 2011. Date of publication July 25, 2011; date of current version September 07, 2011. This work was supported in part by the Center for Micro/Nano Science and Technology, National Cheng Kung University, the Advanced Optoelectronic Technology Center, under projects from the Ministry of Education, Taiwan, and the Bureau of Energy, Ministry of Economic Affairs of Taiwan, under Contract 98-D0204-6.",
year = "2011",
doi = "10.1109/JLT.2011.2162821",
language = "English",
volume = "29",
pages = "2831--2835",
journal = "Journal of Lightwave Technology",
issn = "0733-8724",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "18",
}