GaN-based LEDs with an HT-AlN nucleation layer prepared on patterned sapphire substrate

Chung Ying Chang; Shoou Jinn Chang; C. H. Liu; Shuguang Li; Evan Chen

doi:10.1109/LPT.2012.2228637

GaN-based LEDs with an HT-AlN nucleation layer prepared on patterned sapphire substrate

Chung Ying Chang, Shoou Jinn Chang, C. H. Liu, Shuguang Li, Evan Chen

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

We report the growth and fabrication of GaN-based light-emitting diodes (LEDs) with a high-temperature (HT) AlN nucleation on patterned sapphire substrate. It was found that the undercut sidewalls were only formed for the HT-AlN LED through defect selective etching. At 1-A current injection, the output power of the LED with HT-AlN nucleation was 12% higher than that of an LED with a conventional low temperature GaN nucleation layer.

原文	English
文章編號	6363522
頁（從 - 到）	88-90
頁數	3
期刊	IEEE Photonics Technology Letters
卷	25
發行號	1
DOIs	https://doi.org/10.1109/LPT.2012.2228637
出版狀態	Published - 2013

All Science Journal Classification (ASJC) codes

電子、光磁材料
原子與分子物理與光學
電氣與電子工程

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10.1109/LPT.2012.2228637

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GaN-based LEDs with an HT-AlN nucleation layer prepared on patterned sapphire substrate

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