GaN-based LEDs with an HT-AlN nucleation layer prepared on patterned sapphire substrate

Chung Ying Chang, Shoou Jinn Chang, C. H. Liu, Shuguang Li, Evan Chen

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

We report the growth and fabrication of GaN-based light-emitting diodes (LEDs) with a high-temperature (HT) AlN nucleation on patterned sapphire substrate. It was found that the undercut sidewalls were only formed for the HT-AlN LED through defect selective etching. At 1-A current injection, the output power of the LED with HT-AlN nucleation was 12% higher than that of an LED with a conventional low temperature GaN nucleation layer.

原文English
文章編號6363522
頁(從 - 到)88-90
頁數3
期刊IEEE Photonics Technology Letters
25
發行號1
DOIs
出版狀態Published - 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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