GaN-based LEDs with Ar plasma treatment

D. S. Kuo; K. T. Lam; K. H. Wen; S. J. Chang; T. K. Ko; S. J. Hon

doi:10.1016/j.mssp.2011.08.004

GaN-based LEDs with Ar plasma treatment

D. S. Kuo, K. T. Lam, K. H. Wen, S. J. Chang, T. K. Ko, S. J. Hon

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

摘要

The authors propose a simple Ar plasma treatment method to selectively damage the area underneath p-pad electrode of GaN-based light-emitting diodes (LEDs). It was found that we could form a highly resistive area so that the injected carriers will be forced to spread out horizontally for the LED. Under 20 mA current injection, it was found that the output powers were 16.0, 17.9 and 17.3 mW while the forward voltages were 3.17, 3.19 and 3.20 V for conventional LED and LED with SiO ₂ layer, respectively. Moreover, the LED with Ar plasma treatment is superior to the other LEDs while operating at a higher injection current.

原文	English
頁（從 - 到）	52-55
頁數	4
期刊	Materials Science in Semiconductor Processing
卷	15
發行號	1
DOIs	https://doi.org/10.1016/j.mssp.2011.08.004
出版狀態	Published - 2012 2月

All Science Journal Classification (ASJC) codes

一般材料科學
凝聚態物理學
材料力學
機械工業

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10.1016/j.mssp.2011.08.004

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@article{9867baea148d4e2d877749deeb75d913,

title = "GaN-based LEDs with Ar plasma treatment",

abstract = "The authors propose a simple Ar plasma treatment method to selectively damage the area underneath p-pad electrode of GaN-based light-emitting diodes (LEDs). It was found that we could form a highly resistive area so that the injected carriers will be forced to spread out horizontally for the LED. Under 20 mA current injection, it was found that the output powers were 16.0, 17.9 and 17.3 mW while the forward voltages were 3.17, 3.19 and 3.20 V for conventional LED and LED with SiO 2 layer, respectively. Moreover, the LED with Ar plasma treatment is superior to the other LEDs while operating at a higher injection current.",

author = "Kuo, {D. S.} and Lam, {K. T.} and Wen, {K. H.} and Chang, {S. J.} and Ko, {T. K.} and Hon, {S. J.}",

note = "Funding Information: This work was supported in part by the Center for Frontier Materials and Micro/NanoScience and Technology and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU), under Projects from the Ministry of Education . The authors would also like to thank the Bureau of Energy, Ministry of Economic Affairs of Taiwan for financially supporting this research under Contract no. 98-D0204-6 and the LED Lighting and Research Center, NCKU for the assistance regarding measurements.",

year = "2012",

month = feb,

doi = "10.1016/j.mssp.2011.08.004",

language = "English",

volume = "15",

pages = "52--55",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

number = "1",

}

TY - JOUR

T1 - GaN-based LEDs with Ar plasma treatment

AU - Kuo, D. S.

AU - Lam, K. T.

AU - Wen, K. H.

AU - Chang, S. J.

AU - Ko, T. K.

AU - Hon, S. J.

N1 - Funding Information: This work was supported in part by the Center for Frontier Materials and Micro/NanoScience and Technology and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU), under Projects from the Ministry of Education . The authors would also like to thank the Bureau of Energy, Ministry of Economic Affairs of Taiwan for financially supporting this research under Contract no. 98-D0204-6 and the LED Lighting and Research Center, NCKU for the assistance regarding measurements.

PY - 2012/2

Y1 - 2012/2

N2 - The authors propose a simple Ar plasma treatment method to selectively damage the area underneath p-pad electrode of GaN-based light-emitting diodes (LEDs). It was found that we could form a highly resistive area so that the injected carriers will be forced to spread out horizontally for the LED. Under 20 mA current injection, it was found that the output powers were 16.0, 17.9 and 17.3 mW while the forward voltages were 3.17, 3.19 and 3.20 V for conventional LED and LED with SiO 2 layer, respectively. Moreover, the LED with Ar plasma treatment is superior to the other LEDs while operating at a higher injection current.

AB - The authors propose a simple Ar plasma treatment method to selectively damage the area underneath p-pad electrode of GaN-based light-emitting diodes (LEDs). It was found that we could form a highly resistive area so that the injected carriers will be forced to spread out horizontally for the LED. Under 20 mA current injection, it was found that the output powers were 16.0, 17.9 and 17.3 mW while the forward voltages were 3.17, 3.19 and 3.20 V for conventional LED and LED with SiO 2 layer, respectively. Moreover, the LED with Ar plasma treatment is superior to the other LEDs while operating at a higher injection current.

UR - http://www.scopus.com/inward/record.url?scp=84861189143&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861189143&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2011.08.004

DO - 10.1016/j.mssp.2011.08.004

M3 - Article

AN - SCOPUS:84861189143

SN - 1369-8001

VL - 15

SP - 52

EP - 55

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 1

ER -

GaN-based LEDs with Ar plasma treatment

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