GaN-based LEDs with double strain releasing MQWs and Si delta-doping layers

Chung Ying Chang, Shoou Jinn Chang, C. H. Liu, Shuguang Li, T. K. Lin

研究成果: Article

6 引文 (Scopus)

摘要

In this letter, we report the fabrication of GaN-based light-emitting diodes (LEDs) with double strain releasing multiquantum wells and Si delta-doping (Si-DD) layers. We find that Si-DD can enhance current spreading in the in-plane direction and also suppress dislocation in the epitaxial layers. By inserting the Si-DD layers, we find that we can achieve a smaller forward voltage. We also find that we can significantly increase the reverse breakdown voltage from 35 to 125 V by introducing Si-DD layers. Furthermore, we find that the output power of the LED with Si-DD is more than 10% larger than that of the LED without Si-DD.

原文English
文章編號6294429
頁(從 - 到)1809-1811
頁數3
期刊IEEE Photonics Technology Letters
24
發行號20
DOIs
出版狀態Published - 2012 十月 5

指紋

releasing
Light emitting diodes
light emitting diodes
Doping (additives)
Epitaxial layers
Electric breakdown
Dislocations (crystals)
electrical faults
Fabrication
fabrication
output
Electric potential
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

引用此文

Chang, Chung Ying ; Chang, Shoou Jinn ; Liu, C. H. ; Li, Shuguang ; Lin, T. K. / GaN-based LEDs with double strain releasing MQWs and Si delta-doping layers. 於: IEEE Photonics Technology Letters. 2012 ; 卷 24, 編號 20. 頁 1809-1811.
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GaN-based LEDs with double strain releasing MQWs and Si delta-doping layers. / Chang, Chung Ying; Chang, Shoou Jinn; Liu, C. H.; Li, Shuguang; Lin, T. K.

於: IEEE Photonics Technology Letters, 卷 24, 編號 20, 6294429, 05.10.2012, p. 1809-1811.

研究成果: Article

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