GaN-based LEDs with double strain releasing MQWs and Si delta-doping layers

Chung Ying Chang; Shoou Jinn Chang; C. H. Liu; Shuguang Li; T. K. Lin

doi:10.1109/LPT.2012.2216517

GaN-based LEDs with double strain releasing MQWs and Si delta-doping layers

Chung Ying Chang
, Shoou Jinn Chang
, C. H. Liu
, Shuguang Li
, T. K. Lin

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

In this letter, we report the fabrication of GaN-based light-emitting diodes (LEDs) with double strain releasing multiquantum wells and Si delta-doping (Si-DD) layers. We find that Si-DD can enhance current spreading in the in-plane direction and also suppress dislocation in the epitaxial layers. By inserting the Si-DD layers, we find that we can achieve a smaller forward voltage. We also find that we can significantly increase the reverse breakdown voltage from 35 to 125 V by introducing Si-DD layers. Furthermore, we find that the output power of the LED with Si-DD is more than 10% larger than that of the LED without Si-DD.

原文	English
文章編號	6294429
頁（從 - 到）	1809-1811
頁數	3
期刊	IEEE Photonics Technology Letters
卷	24
發行號	20
DOIs	https://doi.org/10.1109/LPT.2012.2216517
出版狀態	Published - 2012

All Science Journal Classification (ASJC) codes

電子、光磁材料
原子與分子物理與光學
電氣與電子工程

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10.1109/LPT.2012.2216517

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title = "GaN-based LEDs with double strain releasing MQWs and Si delta-doping layers",

abstract = "In this letter, we report the fabrication of GaN-based light-emitting diodes (LEDs) with double strain releasing multiquantum wells and Si delta-doping (Si-DD) layers. We find that Si-DD can enhance current spreading in the in-plane direction and also suppress dislocation in the epitaxial layers. By inserting the Si-DD layers, we find that we can achieve a smaller forward voltage. We also find that we can significantly increase the reverse breakdown voltage from 35 to 125 V by introducing Si-DD layers. Furthermore, we find that the output power of the LED with Si-DD is more than 10\% larger than that of the LED without Si-DD.",

author = "Chang, \{Chung Ying\} and Chang, \{Shoou Jinn\} and Liu, \{C. H.\} and Shuguang Li and Lin, \{T. K.\}",

note = "Funding Information: Manuscript received May 10, 2012; revised August 1, 2012; accepted August 24, 2012. Date of publication September 4, 2012; date of current version September 21, 2012. This work was supported in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU), in part by the Research Center for Energy Technology and Strategy, in part by NCKU under Projects from the Ministry of Education, Taiwan, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan, under Contract 100-D0204-6.",

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AU - Chang, Chung Ying

AU - Chang, Shoou Jinn

AU - Liu, C. H.

AU - Li, Shuguang

AU - Lin, T. K.

N1 - Funding Information: Manuscript received May 10, 2012; revised August 1, 2012; accepted August 24, 2012. Date of publication September 4, 2012; date of current version September 21, 2012. This work was supported in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU), in part by the Research Center for Energy Technology and Strategy, in part by NCKU under Projects from the Ministry of Education, Taiwan, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan, under Contract 100-D0204-6.

PY - 2012

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AB - In this letter, we report the fabrication of GaN-based light-emitting diodes (LEDs) with double strain releasing multiquantum wells and Si delta-doping (Si-DD) layers. We find that Si-DD can enhance current spreading in the in-plane direction and also suppress dislocation in the epitaxial layers. By inserting the Si-DD layers, we find that we can achieve a smaller forward voltage. We also find that we can significantly increase the reverse breakdown voltage from 35 to 125 V by introducing Si-DD layers. Furthermore, we find that the output power of the LED with Si-DD is more than 10% larger than that of the LED without Si-DD.

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GaN-based LEDs with double strain releasing MQWs and Si delta-doping layers

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