GaN-Based LEDs with hot/cold factor improved by the electron blocking layer

Kin Tak Lam, Shoou Jinn Chang

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

The authors report the study of 'thermal droop' for GaN-based light-emitting diodes (LEDs) using a single AlGaN layer with various thicknesses as the electron blocking layer (EBL). It was found that the effect of bandgap narrowing at elevated temperatures on the drop of LED output power should be negligibly smaller. It was also found that the inserted EBL could significantly reduce 'thermal droop' due to the effective suppression of electron overflow at elevated temperatures. Furthermore, it was found that we could drastically reduce the output power decrease by about 42% with a properly designed EBL.

原文English
文章編號6871281
頁(從 - 到)1078-1082
頁數5
期刊Journal of Display Technology
10
發行號12
DOIs
出版狀態Published - 2014 十二月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程

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