GaN-based LEDs with mesh ITO p-contact and nanopillars

Wei Chih Lai, P. H. Chen, Li Chuan Chang, Cheng Huang Kuo, Jinn Kong Sheu, Chun Ju Tun, S. C. Shei

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this letter, the authors report the fabrication of GaN-based light-emitting diodes (LEDs) with mesh indium-tin-oxide p-contact and nanopillars on patterned sapphire substrate. Using hydrothermal ZnO nanorods as the etching hard mask, the authors successfully formed vertical GaN nanopillars inside the mesh regions and on the mesa-etched regions. It was found that 20-mA forward voltage and reverse leakage currents observed from the proposed LED were only slightly larger than those observed from the conventional LEDs. It was also found that output power of the proposed LED was more than 80% larger than that observed from conventional LED prepared on flat sapphire substrate.

原文English
頁(從 - 到)1293-1295
頁數3
期刊IEEE Photonics Technology Letters
21
發行號18
DOIs
出版狀態Published - 2009 九月 15

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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