The authors report GaN-based LEDs with nano-patterns by contact-transferred and mask-embedded lithography (CMEL) and Cl2/N2 plasma etching with in-situ 20-sccm N2 treatment. With 20 mA current injection, it was found that output powers were 4.28, 4.59, and 5.16 mW for the LEDs without CMEL, with CMEL-3 μm, and with CMEL-400 nm, respectively. It was also found that we can achieve 20.5% enhancement for the LED with CMEL-400 nm. Besides, The CMEL will not degrade the electrical properties of the GaN-based LEDs.
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