GaN-based LEDs with nano-patterns by contact-transferred and mask-embedded lithography and Cl2/N2 plasma etching

X. F. Zeng, S. C. Shei, S. J. Chang

研究成果: Article

1 引文 (Scopus)

摘要

The authors report GaN-based LEDs with nano-patterns by contact-transferred and mask-embedded lithography (CMEL) and Cl2/N2 plasma etching with in-situ 20-sccm N2 treatment. With 20 mA current injection, it was found that output powers were 4.28, 4.59, and 5.16 mW for the LEDs without CMEL, with CMEL-3 μm, and with CMEL-400 nm, respectively. It was also found that we can achieve 20.5% enhancement for the LED with CMEL-400 nm. Besides, The CMEL will not degrade the electrical properties of the GaN-based LEDs.

原文English
頁(從 - 到)R27-R30
期刊ECS Solid State Letters
1
發行號6
DOIs
出版狀態Published - 2012 十二月 1

指紋

Plasma etching
Lithography
Light emitting diodes
Masks
Electric properties

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

@article{f293ee0314884193a0fb57220d8fa6db,
title = "GaN-based LEDs with nano-patterns by contact-transferred and mask-embedded lithography and Cl2/N2 plasma etching",
abstract = "The authors report GaN-based LEDs with nano-patterns by contact-transferred and mask-embedded lithography (CMEL) and Cl2/N2 plasma etching with in-situ 20-sccm N2 treatment. With 20 mA current injection, it was found that output powers were 4.28, 4.59, and 5.16 mW for the LEDs without CMEL, with CMEL-3 μm, and with CMEL-400 nm, respectively. It was also found that we can achieve 20.5{\%} enhancement for the LED with CMEL-400 nm. Besides, The CMEL will not degrade the electrical properties of the GaN-based LEDs.",
author = "Zeng, {X. F.} and Shei, {S. C.} and Chang, {S. J.}",
year = "2012",
month = "12",
day = "1",
doi = "10.1149/2.010206ssl",
language = "English",
volume = "1",
pages = "R27--R30",
journal = "ECS Solid State Letters",
issn = "2162-8742",
publisher = "The Electrochemical Society",
number = "6",

}

TY - JOUR

T1 - GaN-based LEDs with nano-patterns by contact-transferred and mask-embedded lithography and Cl2/N2 plasma etching

AU - Zeng, X. F.

AU - Shei, S. C.

AU - Chang, S. J.

PY - 2012/12/1

Y1 - 2012/12/1

N2 - The authors report GaN-based LEDs with nano-patterns by contact-transferred and mask-embedded lithography (CMEL) and Cl2/N2 plasma etching with in-situ 20-sccm N2 treatment. With 20 mA current injection, it was found that output powers were 4.28, 4.59, and 5.16 mW for the LEDs without CMEL, with CMEL-3 μm, and with CMEL-400 nm, respectively. It was also found that we can achieve 20.5% enhancement for the LED with CMEL-400 nm. Besides, The CMEL will not degrade the electrical properties of the GaN-based LEDs.

AB - The authors report GaN-based LEDs with nano-patterns by contact-transferred and mask-embedded lithography (CMEL) and Cl2/N2 plasma etching with in-situ 20-sccm N2 treatment. With 20 mA current injection, it was found that output powers were 4.28, 4.59, and 5.16 mW for the LEDs without CMEL, with CMEL-3 μm, and with CMEL-400 nm, respectively. It was also found that we can achieve 20.5% enhancement for the LED with CMEL-400 nm. Besides, The CMEL will not degrade the electrical properties of the GaN-based LEDs.

UR - http://www.scopus.com/inward/record.url?scp=84880543519&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84880543519&partnerID=8YFLogxK

U2 - 10.1149/2.010206ssl

DO - 10.1149/2.010206ssl

M3 - Article

AN - SCOPUS:84880543519

VL - 1

SP - R27-R30

JO - ECS Solid State Letters

JF - ECS Solid State Letters

SN - 2162-8742

IS - 6

ER -