TY - JOUR
T1 - GaN-based LEDs with omnidirectional metal underneath an insulating SiO 2 layer
AU - Lin, Nan Ming
AU - Shei, Shih Chang
AU - Chang, Shoou Jinn
AU - Zeng, Xu Feng
N1 - Funding Information:
Manuscript received June 15, 2011; revised February 12, 2012; accepted February 16, 2012. Date of current version April 13, 2012. This work was supported in part by the Advanced Optoelectronic Technology Center, in part by the Center for Micro/Nano Science and Technology, NCKU, under projects from the Ministry of Education, Taiwan, in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan, under Contract 101-D0204-6, and in part by the LED Lighting and Research Center, NCKU, providing assistance with LED measurements.
PY - 2012
Y1 - 2012
N2 - The authors report GaN-based light-emitting diodes (LEDs) with an Ag layer underneath an insulating SiO 2 layer. It was found that we can not only achieve much better current spreading, but also prevent the light absorption by the opaque p-pad electrode. With 20-mA current injection, it was found that the output power of the LEDs with SiO 2/Ag layers was 4.1% and 9.6% larger than those of the LEDs with a SiO 2 layer and the LEDs without a SiO 2 layer, respectively. It was also found that the 20-mA forward voltage only increased slightly, from 3.03 to 3.05 V, for the LEDs with the SiO 2/Ag layers.
AB - The authors report GaN-based light-emitting diodes (LEDs) with an Ag layer underneath an insulating SiO 2 layer. It was found that we can not only achieve much better current spreading, but also prevent the light absorption by the opaque p-pad electrode. With 20-mA current injection, it was found that the output power of the LEDs with SiO 2/Ag layers was 4.1% and 9.6% larger than those of the LEDs with a SiO 2 layer and the LEDs without a SiO 2 layer, respectively. It was also found that the 20-mA forward voltage only increased slightly, from 3.03 to 3.05 V, for the LEDs with the SiO 2/Ag layers.
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U2 - 10.1109/LPT.2012.2188789
DO - 10.1109/LPT.2012.2188789
M3 - Article
AN - SCOPUS:84859885322
SN - 1041-1135
VL - 24
SP - 815
EP - 817
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 10
M1 - 6180073
ER -