GaN-based LEDs with omnidirectional metal underneath an insulating SiO 2 layer

Nan Ming Lin, Shih Chang Shei, Shoou-Jinn Chang, Xu Feng Zeng

研究成果: Article

8 引文 (Scopus)

摘要

The authors report GaN-based light-emitting diodes (LEDs) with an Ag layer underneath an insulating SiO 2 layer. It was found that we can not only achieve much better current spreading, but also prevent the light absorption by the opaque p-pad electrode. With 20-mA current injection, it was found that the output power of the LEDs with SiO 2/Ag layers was 4.1% and 9.6% larger than those of the LEDs with a SiO 2 layer and the LEDs without a SiO 2 layer, respectively. It was also found that the 20-mA forward voltage only increased slightly, from 3.03 to 3.05 V, for the LEDs with the SiO 2/Ag layers.

原文English
文章編號6180073
頁(從 - 到)815-817
頁數3
期刊IEEE Photonics Technology Letters
24
發行號10
DOIs
出版狀態Published - 2012 四月 24

指紋

Light emitting diodes
light emitting diodes
Metals
metals
Light absorption
electromagnetic absorption
Electrodes
injection
Electric potential
electrodes
output
electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

引用此文

Lin, Nan Ming ; Shei, Shih Chang ; Chang, Shoou-Jinn ; Zeng, Xu Feng. / GaN-based LEDs with omnidirectional metal underneath an insulating SiO 2 layer. 於: IEEE Photonics Technology Letters. 2012 ; 卷 24, 編號 10. 頁 815-817.
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GaN-based LEDs with omnidirectional metal underneath an insulating SiO 2 layer. / Lin, Nan Ming; Shei, Shih Chang; Chang, Shoou-Jinn; Zeng, Xu Feng.

於: IEEE Photonics Technology Letters, 卷 24, 編號 10, 6180073, 24.04.2012, p. 815-817.

研究成果: Article

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