The authors report GaN-based light-emitting diodes (LEDs) with an Ag layer underneath an insulating SiO 2 layer. It was found that we can not only achieve much better current spreading, but also prevent the light absorption by the opaque p-pad electrode. With 20-mA current injection, it was found that the output power of the LEDs with SiO 2/Ag layers was 4.1% and 9.6% larger than those of the LEDs with a SiO 2 layer and the LEDs without a SiO 2 layer, respectively. It was also found that the 20-mA forward voltage only increased slightly, from 3.03 to 3.05 V, for the LEDs with the SiO 2/Ag layers.
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