GaN-based LEDs with omnidirectional metal underneath an insulating SiO 2 layer

Nan Ming Lin, Shih Chang Shei, Shoou Jinn Chang, Xu Feng Zeng

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

The authors report GaN-based light-emitting diodes (LEDs) with an Ag layer underneath an insulating SiO 2 layer. It was found that we can not only achieve much better current spreading, but also prevent the light absorption by the opaque p-pad electrode. With 20-mA current injection, it was found that the output power of the LEDs with SiO 2/Ag layers was 4.1% and 9.6% larger than those of the LEDs with a SiO 2 layer and the LEDs without a SiO 2 layer, respectively. It was also found that the 20-mA forward voltage only increased slightly, from 3.03 to 3.05 V, for the LEDs with the SiO 2/Ag layers.

原文English
文章編號6180073
頁(從 - 到)815-817
頁數3
期刊IEEE Photonics Technology Letters
24
發行號10
DOIs
出版狀態Published - 2012

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

指紋

深入研究「GaN-based LEDs with omnidirectional metal underneath an insulating SiO <sub>2</sub> layer」主題。共同形成了獨特的指紋。

引用此